NE856M03-T1-A CEL, NE856M03-T1-A Datasheet

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NE856M03-T1-A

Manufacturer Part Number
NE856M03-T1-A
Description
TRANSISTOR NPN 1GHZ SC-90
Manufacturer
CEL
Datasheet
1.NE856M03-T1-A.pdf (4 pages)

Specifications of NE856M03-T1-A

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
12V
Frequency - Transition
4.5GHz
Noise Figure (db Typ @ F)
1.4dB ~ 2.5dB @ 1GHz
Power - Max
125mW
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 7mA, 3V
Current - Collector (ic) (max)
100mA
Mounting Type
Surface Mount
Package / Case
3-XSOF, MiniMold
Dc Collector/base Gain Hfe Min
145
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.1 A
Power Dissipation
125 mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
ELECTRICAL CHARACTERISTICS
FEATURES
NEC's NE856M03 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/flat lead style "M03" package
is ideal for today's portable wireless applications. The NE856
is also available in chip, Micro-x, and eight different low cost
plastic surface mount package styles.
Notes:
• NEW M03 PACKAGE:
• LOW NOISE FIGURE:
• HIGH COLLECTOR CURRENT:
DESCRIPTION
SYMBOLS
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
NF = 1.4 dB at 1 GHz
I
CMAX
|S
C
h
I
I
NF
CBO
EBO
21E
FE 2
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
f
RE 3
T
|
= 100 mA
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
CE
PARAMETERS AND CONDITIONS
= 3 V, I
CE
EIAJ
NPN SILICON TRANSISTOR
= 3 V, I
CE
PACKAGE OUTLINE
1
CE
EB
REGISTERED NUMBER
C
CB
CB
PART NUMBER
= 3 V, I
= 7 mA, f = 1 GHz
= 3 V, I
= 1 V, I
C
= 3 V, I
= 10 V, I
= 7 mA, f = 1 GHz
(T
C
A
C
C
= 7 mA, f = 1 GHz
E
= 25°C)
= 7 mA
= 0
E
= 0, f = 1 MHz
= 0
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
OUTLINE DIMENSIONS
1.4 ±0.1
(0.9)
0.59±0.05
California Eastern Laboratories
0.45
0.45
UNITS
0.2±0.1
GHz
dB
dB
µA
pF
µA
PACKAGE OUTLINE M03
1
2
1.2±0.05
0.8±0.1
MIN
3.0
7.0
80
NE856M03
(Units in mm)
NE856M03
2SC5432
3
M03
TYP
10.0
4.5
1.4
0.7
0.3±0.1
0.15
-0.05
+0.1
MAX
145
2.5
1.0
1.0
1.5

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NE856M03-T1-A Summary of contents

Page 1

... I = 100 mA CMAX DESCRIPTION NEC's NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles ...

Page 2

... NE856M03 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 9.2e-16 MJC BF 110.3 XCJC NF 1.01 CJS VAF 18 VJS IKF 1 MJS ISE 4.89e 4. 10.08 XTF NR 1.0 VTF VAR 8 ITF IKR 0.03 PTF ISC 3.32e- 3. 0.33 XTB RB 1.26 XTI RBM 2 KF IRB ...

Page 3

... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE 1 ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 20 NE856M03 NE856M03-T1 100 mW 125 150 °C -65 to +150 ° 25° ...

Page 4

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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