AT-30533-TR1G Avago Technologies US Inc., AT-30533-TR1G Datasheet - Page 2

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AT-30533-TR1G

Manufacturer Part Number
AT-30533-TR1G
Description
TRANS NPN BIPO 5.5V 8MA SOT-23
Manufacturer
Avago Technologies US Inc.
Datasheets

Specifications of AT-30533-TR1G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
5.5V
Noise Figure (db Typ @ F)
1.1dB ~ 1.4dB @ 900MHz
Gain
11dB ~ 13dB
Power - Max
100mW
Dc Current Gain (hfe) (min) @ Ic, Vce
70 @ 1mA, 2.7V
Current - Collector (ic) (max)
8mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
5.5V
Transition Frequency Typ Ft
10GHz
Power Dissipation Pd
100mW
Dc Collector Current
8mA
Dc Current Gain Hfe
70
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT-30533-TR1G
Manufacturer:
AVAGO
Quantity:
297
Part Number:
AT-30533-TR1G
Manufacturer:
AVAGO/安华高
Quantity:
20 000
AT-30511, AT-30533 Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. T
3. Derate at 1.82 mW/°C for T
Electrical Specifications, T
Notes:
1. Test circuit B, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
2. Test circuit A, Figure 1. Numbers reflect device performance de-embedded from circuit losses.
Figure 1. Test Circuit for Noise Figure and Associated Gain. This Circuit is a Compromise Match Between Best Noise
Figure, Best Gain, Stability, a Practical, Synthesizable Match, and a Circuit Capable of Matching Both the AT-305
and AT-310 Geometries.
2
W = 10 L = 1000
TEST CIRCUIT
BOARD MATL = 0.062" FR-4 (ε = 4.8)
DIMENSIONS IN MILS
Input loss = 0.4 dB; output loss = 0.4 dB.
Input loss = 0.4 dB; output loss = 0.4 dB.
Symbol
Mounting Surface
Symbol
1000 pF
V
V
V
T
I
I
h
NF
G
CBO
EBO
CBO
CEO
P
EBO
T
I
STG
C
FE
T
A
j
V
BB
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameters and Test Conditions
Noise Figure
V
Associated Gain
V
Forward Current
Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
W = 10 L = 1860
= 25°C.
CE
CE
= 2.7 V, I
= 2.7 V, I
Parameter
W = 30 L = 100
C
C
C
A
= 1 mA
> 95°C.
= 1 mA
= 25°C
[2] [3]
AT-30511 fig 1
TEST CIRCUIT A: W = 20 L = 100
TEST CIRCUIT B: W = 20 L = 200 x 2
W = 30 L = 100
Units
mW
mA
°C
°C
V
V
V
NOT TO SCALE
W = 10 L = 1860
f = 0.9 GHz
f = 0.9 GHz
V
I
CE
C
V
V
CB
= 1 mA
EB
= 2.7 V
Absolute Maximum
= 3 V
= 1 V
-65 to 150
V
100
150
CC
1.5
5.5
11
8
Units
µA
µA
dB
dB
W = 10 L = 1025
-
25 Ω
1000 pF
[1]
14
Min
70
[1]
AT-30511
1.1
16
0.03
Typ
0.1
[1]
[1]
1.4
Max
300
0.2
1.5
Thermal Resistance
θ
[1]
jc
= 550°C/W
11
Min
70
[2]
AT-30533
1.1
13
0.03
Typ
0.1
[2]
[2]
[2]
:
1.4
Max
300
0.2
1.5
[2]

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