BFR505T,115 NXP Semiconductors, BFR505T,115 Datasheet - Page 6

• Manufacturer Part Number: BFR505T,115
• Description: TRANS NPN 15V 9GHZ SOT-416
• Manufacturer: NXP Semiconductors

Specifications of BFR505T,115

• Package / Case: EMT3 (SOT-416, SC-75-3)
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055891115; BFR505T T/R; BFR505T T/R

NXP Semiconductors
In Figs 6 to 9, G
MSG = maximum stable gain; G
gain.
2000 May 17
handbook, halfpage
handbook, halfpage
NPN 9 GHz wideband transistor
V
I
C
gain
(dB)
CE
gain
(dB)
= 1.25 mA; V
Fig.6 Gain as a function of collector current.
= 6 V; f = 900 MHz; T
50
40
30
20
10
25
20
15
10
0
10
5
0
Fig.8 Gain as a function of frequency.
0
−2
CE
UM
G UM
= 6 V; T
MSG
= maximum unilateral power gain;
2
10
amb
MSG
−1
amb
= 25 C.
= 25 C.
G UM
4
max
1
= maximum available
6
f (GHz)
I C (mA)
G max
MRC015
MRC016
10
8
6
handbook, halfpage
handbook, halfpage
V
I
C
gain
(dB)
CE
gain
(dB)
= 5 mA; V
Fig.7 Gain as a function of collector current.
= 6 V; f = 2 GHz; T
20
15
10
50
40
30
20
10
5
0
10
0
0
Fig.9 Gain as a function of frequency.
−2
CE
= 6 V; T
2
MSG
amb
amb
10
−1
G UM
= 25 C.
= 25 C.
4
1
Product specification
G max
6
G UM
MSG
G max
f (GHz)
BFR505T
I C (mA)
MRC014
MRC017
10
8