MX0912B351Y,114 NXP Semiconductors, MX0912B351Y,114 Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
MX0912B351Y,114
Manufacturer Part Number
MX0912B351Y,114
Description
TRANSISTOR POWER NPN SOT439A
Manufacturer
NXP Semiconductors
Datasheet
1.MX0912B351Y114.pdf
(12 pages)
Specifications of MX0912B351Y,114
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
1.215GHz
Gain
7.6dB
Power - Max
960W
Current - Collector (ic) (max)
21A
Mounting Type
Surface Mount
Package / Case
SOT-439A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Noise Figure (db Typ @ F)
-
Other names
934033550114
MX0912B351Y TRAY
MX0912B351Y TRAY
MX0912B351Y TRAY
MX0912B351Y TRAY
Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
0.635
15
30
11
2
L1
Fig.6 Broadband test circuit.
C5
5
C3
7
3
24
5
7
1.5
4.5
21.5
5.5
5
C6
3.5
5
30
C2
7.5
0.7
L2
2.5
3.5 1
3.2
MLC085
V CC
MLC086
C1
40
MX0912B351Y
Product specification