MX0912B351Y,114 NXP Semiconductors, MX0912B351Y,114 Datasheet - Page 7

• Manufacturer Part Number: MX0912B351Y,114
• Description: TRANSISTOR POWER NPN SOT439A
• Manufacturer: NXP Semiconductors

Specifications of MX0912B351Y,114

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 20V
• Frequency - Transition: 1.215GHz
• Gain: 7.6dB
• Power - Max: 960W
• Current - Collector (ic) (max): 21A
• Mounting Type: Surface Mount
• Package / Case: SOT-439A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Dc Current Gain (hfe) (min) @ Ic, Vce: -
• Noise Figure (db Typ @ F): -
• Other names: 934033550114; MX0912B351Y TRAY; MX0912B351Y TRAY

Philips Semiconductors
1997 Feb 19
handbook, full pagewidth
handbook, full pagewidth
NPN microwave power transistor
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity:
r
= 10.
40
0.635
15
30
11
2
L1
Fig.6 Broadband test circuit.
C5
5
C3
7
3
24
5
7
1.5
4.5
21.5
5.5
5
C6
3.5
5
30
C2
7.5
0.7
L2
2.5
3.5 1
3.2
MLC085
V CC
MLC086
C1
40
MX0912B351Y
Product specification