BFR 705L3RH E6327 Infineon Technologies, BFR 705L3RH E6327 Datasheet - Page 2
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BFR 705L3RH E6327
Manufacturer Part Number
BFR 705L3RH E6327
Description
TRANS RF BIPO NPN 10MA TSLP-3-9
Manufacturer
Infineon Technologies
Datasheet
1.BFR_705L3RH_E6327.pdf
(7 pages)
Specifications of BFR 705L3RH E6327
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
4.7V
Frequency - Transition
39GHz
Noise Figure (db Typ @ F)
0.5dB ~ 0.8dB @ 1.8GHz ~ 6Ghz
Gain
25dB
Power - Max
40mW
Dc Current Gain (hfe) (min) @ Ic, Vce
160 @ 7mA, 3V
Current - Collector (ic) (max)
10mA
Mounting Type
Surface Mount
Package / Case
TSLP-3-9
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BFR705L3RHE6327INTR
BFR705L3RHE6327XT
SP000252590
BFR705L3RHE6327XT
SP000252590
Maximum Ratings
Parameter
Collector-emitter voltage
T
T
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-emitter cutoff current
V
Collector-base cutoff current
V
Emitter-base cutoff current
V
DC current gain
I
1
2
C
C
T S is measured on the collector lead at the soldering point to the pcb
For calculation of R
A
A
CE
CB
EB
= 1 mA, I
= 7 mA, V
> 0°C
= 0.5 V, I
= 13 V, V
= 5 V, I
0°C
B
E
CE
= 0
C
= 0
BE
= 0
= 3 V, pulse measured
thJA
= 0
please refer to Application Note Thermal Resistance
1)
, T
2)
S
123 °C
A
= 25°C, unless otherwise specified
2
Symbol
V
I
I
I
h
Symbol
V
V
V
V
I
I
P
T
T
T
Symbol
R
CES
CBO
EBO
C
B
FE
CEO
CES
CBO
EBO
tot
j
A
stg
(BR)CEO
thJS
min.
160
4
-
-
-
-65 ... 150
-65 ... 150
Values
Value
Value
150
typ.
250
4.7
3.5
1.2
13
13
10
40
665
4
1
-
-
-
BFR705L3RH
max.
100
400
30
1
2007-03-30
-
Unit
V
µA
nA
µA
-
Unit
V
mA
mW
°C
Unit
K/W