BFP420E6327 Infineon Technologies, BFP420E6327 Datasheet - Page 5

• Manufacturer Part Number: BFP420E6327
• Description: TRANS NPN RF 4.5V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP420E6327

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 1.1dB @ 1.8GHz
• Gain: 21dB
• Power - Max: 160mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 20mA, 4V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP420; BFP420E6327XT; BFP420INTR; BFP420XTINTR; BFP420XTINTR; SP000011035

For non-linear simulation:
· Use transistor chip parameters in Berkeley SPICE 2G.6 syntax for all simulators.
· If you need simulation of the reverse characteristics, add the diode with the
· Simulation of package is not necessary for frequencies < 100MHz.
Note:
· This transistor is constructed in a common emitter configuration. This feature causes
The common emitter configuration shows the following advantages:
· Higher gain because of lower emitter inductance.
· Power is dissipated via the grounded emitter leads, because the chip is mounted
Please note, that the broadest lead is the emitter lead.
Common Emitter S- and Noise-parameter
For detailed S- and Noise-parameters please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon Technologies Application Notes
CD-ROM or see Internet: http://www.infineon.com/silicondiscretes
an additional reverse biased diode between emitter and collector, which does not
effect normal operation.
on copper emitter leadframe.
C'-E'- diode data between collector and emitter.
For higher frequencies add the wiring of package equivalent circuit around the
non-linear transistor and diode model.
Transistor Schematic Diagram
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EHA07307
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2007-04-20
BFP420