MPSH10G ON Semiconductor, MPSH10G Datasheet - Page 2

• Manufacturer Part Number: MPSH10G
• Description: TRANS NPN VHF/UHF SS 25V TO92
• Manufacturer: ON Semiconductor

Specifications of MPSH10G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60
• Maximum Operating Frequency: 650 MHz
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPSH10GOS

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specification Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product
Collector−Base Capacitance
Common−Base Feedback Capacitance
Collector Base Time Constant
MPSH10
MPSH10G
MPSH10RLRA
MPSH10RLRAG
MPSH10RLRP
MPSH10RLRPG
(I
(I
(I
(V
(V
(I
(I
(I
(I
(V
(V
(I
C
C
E
C
C
C
C
C
CB
EB
CB
CB
= 1.0 mAdc, I
= 100 mAdc, I
= 10 mAdc, I
= 4.0 mAdc, V
= 4.0 mAdc, I
= 4.0 mAdc, V
= 4.0 mAdc, V
= 4.0 mAdc, V
= 25 Vdc, I
= 2.0 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
Device
C
E
E
E
B
E
B
C
= 0)
CE
CE
CE
CB
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0.4 mAdc)
= 0)
= 10 Vdc)
= 10 Vdc)
= 10 Vdc, f = 100 MHz)
= 10 Vdc, f = 31.8 MHz)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
TO−92
TO−92
TO−92
TO−92
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
rb’C
I
CE(sat)
I
BE(on)
h
CBO
EBO
C
C
f
FE
T
cb
rb
c
2000 / Tape & Reel
2000 / Tape & Reel
2000 / Ammo Pack
2000 / Ammo Pack
5000 Units / Box
5000 Units / Box
0.35
Min
650
Shipping
3.0
25
30
60
−
−
−
−
−
−
†
Max
0.95
0.65
100
100
0.5
0.7
9.0
−
−
−
−
−
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
ps
−