MPSH10G ON Semiconductor, MPSH10G Datasheet

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MPSH10G

Manufacturer Part Number
MPSH10G
Description
TRANS NPN VHF/UHF SS 25V TO92
Manufacturer
ON Semiconductor
Datasheet

Specifications of MPSH10G

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
25V
Frequency - Transition
650MHz
Power - Max
350mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 4mA, 10V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
3 V
Power Dissipation
350 W
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
60
Maximum Operating Frequency
650 MHz
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector (ic) (max)
-
Gain
-
Noise Figure (db Typ @ F)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MPSH10GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPSH10G
Manufacturer:
ON
Quantity:
40 000
Part Number:
MPSH10G
Manufacturer:
ON/安森美
Quantity:
20 000
MPSH10
VHF/UHF Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2007
February, 2007 − Rev. 3
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Total Device Dissipation @ T
Derate above 25°C
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Pb−Free Packages are Available*
Characteristic
Rating
A
Preferred Device
C
= 25°C
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
EBO
, T
qJA
qJC
D
D
stg
−55 to +150
200357
Value
Max
350
125
3.0
2.8
1.0
8.0
25
30
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
ORDERING INFORMATION
1
A
Y
WW = Work Week
G
2
MARKING DIAGRAM
3
BASE
http://onsemi.com
1
= Assembly Location
= Year
= Pb−Free Package
AYWW G
COLLECTOR
MPS
H10
EMITTER
G
Publication Order Number:
CASE 29−11
3
STYLE 2
2
TO−92
MPSH10/D

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MPSH10G Summary of contents

Page 1

... Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 February, 2007 − ...

Page 2

... Collector Base Time Constant (I = 4.0 mAdc Vdc 31.8 MHz ORDERING INFORMATION Device MPSH10 MPSH10G MPSH10RLRA MPSH10RLRAG MPSH10RLRP MPSH10RLRPG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/ 25°C unless otherwise noted) ...

Page 3

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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