3MN03SF-TL-E SANYO, 3MN03SF-TL-E Datasheet

TRANS NPN 20V 30MA 3SSFP

3MN03SF-TL-E

Manufacturer Part Number
3MN03SF-TL-E
Description
TRANS NPN 20V 30MA 3SSFP
Manufacturer
SANYO
Datasheet

Specifications of 3MN03SF-TL-E

Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
20V
Frequency - Transition
320MHz
Noise Figure (db Typ @ F)
3dB @ 100MHz
Power - Max
150mW
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 1mA, 6V
Current - Collector (ic) (max)
30mA
Mounting Type
Surface Mount
Package / Case
3-SSFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Other names
869-1114-2
Ordering number : EN8651A
3MN03SF
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : WA
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Small package allows applied sets to be made small and thin.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Symbol
Symbol
V CBO
V CEO
V EBO
I CBO
I EBO
NPN Epitaxial Planar Silicon Transistor
High-Frequency General-Purpose
Amplifier Applications
Tstg
h FE
Cre
P C
NF
I C
Tj
f T
SANYO Semiconductors
V CB =10V, I E =0A
V EB =4V, I C =0A
V CE =6V, I C =1mA
V CE =6V, I C =1mA
V CB =6V, f=1MHz
V CE =6V, I C =1mA, f=100MHz
Mounted on a ceramic board (600mm
72606 / 32406 MS IM TB-00002142 / D2805AA MS IM TB-00001950
3MN03SF
Conditions
Conditions
2
0.8mm)
DATA SHEET
min
200
60
Ratings
typ
Ratings
320
0.8
3.0
--55 to +150
max
150
150
200
30
20
30
0.1
0.1
1.3
5
No.8651-1/4
MHz
Unit
mW
Unit
mA
dB
pF
V
V
V
C
C
A
A

Related parts for 3MN03SF-TL-E

3MN03SF-TL-E Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 3MN03SF SANYO Semiconductors NPN Epitaxial Planar Silicon Transistor High-Frequency General-Purpose ...

Page 2

... Top View 1.4 0. 0.2 0.1 0. Base 2 : Emitter 3 : Collector 3 SANYO : SSFP Bottom View Collector-to-Emitter Voltage 100 0.1 1.0 Collector Current 3MN03SF IT09498 1000 100 IT09500 0.2 0.4 0.6 Base-to-Emitter Voltage 1.0 10 Collector Current =6V 0.8 1.0 IT09499 IT09501 No.8651-2/4 ...

Page 3

... Cob -- 1 0.1 1.0 Collector-to-Base Voltage (sat 0 1.0 10 Collector Current 200 150 100 100 Ambient Temperature 3MN03SF 7 f=1MHz 1 0.1 IT09502 = =6V f=100MHz IT09504 120 140 160 IT09807 Cre -- V CB f=1MHz 1.0 10 Collector-to-Base Voltage IT09503 PG 1.0 10 Collector Current IT09505 No.8651-3 ...

Page 4

... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. 3MN03SF PS No.8651-4/4 ...

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