BFP 620 E7764 Infineon Technologies, BFP 620 E7764 Datasheet - Page 6

• Manufacturer Part Number: BFP 620 E7764
• Description: TRANSISTOR RF NPN 2.3V SOT-343
• Manufacturer: Infineon Technologies

Specifications of BFP 620 E7764

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 2.8V
• Frequency - Transition: 65GHz
• Noise Figure (db Typ @ F): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
• Gain: 21.5dB
• Power - Max: 185mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 110 @ 50mA, 1.5V
• Current - Collector (ic) (max): 80mA
• Mounting Type: Surface Mount
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Emitter- Base Voltage Vebo: 1.2 V
• Power Dissipation: 185 mW
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 2.3 V
• Maximum Operating Frequency: 65000 MHz
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFP 620 E7764; BFP620E7764INTR; BFP620E7764XT; SP000012604

Power gain G
V
f = parameter in GHz
Minimum noise figure NF
V
CE
CE
dB
= 1.5V
= 2 V, Z
30
26
24
22
20
18
16
14
12
10
8
0
10
S
20
ma
= Z
, G
30
Sopt
ms
40
= ƒ (I
50
min
C
60
)
= ƒ (I
70 mA
C
)
I
C
0.9
1.8
2.4
3
4
5
6
90
6
Power gain G
I
f = parameter in GHz
Minimum noise figure NF
V
C
CE
= 50 mA
dB
= 2 V, Z
30
20
15
10
-5
5
0
0.2
0.6
S
ma
= Z
, G
Sopt
1
ms
= ƒ (V
1.4
min
CE
1.8
2010-09-21
= ƒ (f)
)
BFP620
V
V
0.9
1.8
2.4
3
4
5
6
CE
2.6