BFR 181 E6327 Infineon Technologies, BFR 181 E6327 Datasheet - Page 3

• Manufacturer Part Number: BFR 181 E6327
• Description: TRANSISTOR NPN RF 12V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BFR 181 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (db Typ @ F): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
• Gain: 18.5dB
• Power - Max: 175mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 5mA, 8V
• Current - Collector (ic) (max): 20mA
• Mounting Type: Surface Mount
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BFR 181 E6327; BFR181E6327INTR; BFR181E6327XT; SP000011047

Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum stable
I
f = 900 MHz
Power gain, maximum available
I
f = 1.8 GHz
Transducer gain
I
f = 900 MHz
I
f = 1.8 MHz
1
2
C
C
C
C
C
C
C
G
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 )
CB
CE
EB
ms
= 10 mA, V
= 2 mA, V
= 2 mA, V
= 10 mA, V
= 5 mA, V
= 5 mA, V
= 5 mA, V
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= | S
21
/ S
CE
CE
CE
CE
CE
12
CE
CE
|
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, f = 500 MHz
= 8 V, Z
S
S
S
S
S
BE
BE
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
1)
Sopt
L
L
Sopt
= 50
= 50
A
2)
,
,
, Z
= 25°C, unless otherwise specified
, Z
L
L
= Z
,
,
= Z
Lopt
Lopt
,
,
3
Symbol
f
C
C
C
F
G
G
|S
T
cb
ce
eb
ms
ma
21e
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
18.5
14.5
0.27
0.35
12.5
typ.
0.2
0.9
1.2
9.5
8
max.
0.45
2007-03-30
-
-
-
-
-
-
-
-
-
BFR181
Unit
GHz
pF
dB
dB
dB
dB