NESG3031M05-A CEL, NESG3031M05-A Datasheet - Page 6

• Manufacturer Part Number: NESG3031M05-A
• Description: TRANS NPN 5.8GHZ M05
• Manufacturer: CEL

Specifications of NESG3031M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.3V
• Noise Figure (db Typ @ F): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
• Gain: 7.5dB ~ 16dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 6mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

4
Remark The graphs indicate nominal characteristics.
1 000
1 000
100
100
10
10
30
25
20
15
10
5
0
0.1
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 2 V
COLLECTOR CURRENT
COLLECTOR CURRENT
DC CURRENT GAIN vs.
DC CURRENT GAIN vs.
Collector Current I
Collector Current I
Collector Current I
1
1
10
C
C
C
10
10
(mA)
(mA)
(mA)
V
V
CE
CE
= 1 V
= 3 V
Data Sheet PU10414EJ04V0DS
100
100
100
1 000
100
10
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0.1
1
1
V
f = 2 GHz
V
f = 2 GHz
CE
CE
GAIN BANDWIDTH PRODUCT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
vs. COLLECTOR CURRENT
= 1 V
= 3 V
COLLECTOR CURRENT
DC CURRENT GAIN vs.
Collector Current I
Collector Current I
Collector Current I
1
10
10
NESG3031M05
C
C
C
10
(mA)
(mA)
(mA)
V
CE
= 2 V
100
100
100