NESG3031M05-A CEL, NESG3031M05-A Datasheet - Page 5

• Manufacturer Part Number: NESG3031M05-A
• Description: TRANS NPN 5.8GHZ M05
• Manufacturer: CEL

Specifications of NESG3031M05-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.3V
• Noise Figure (db Typ @ F): 0.6dB ~ 1.5dB @ 2.4GHz ~ 5.8GHz
• Gain: 7.5dB ~ 16dB
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 6mA, 2V
• Current - Collector (ic) (max): 35mA
• Mounting Type: Surface Mount
• Package / Case: M05
• Continuous Collector Current: 35 mA
• Emitter- Base Voltage Vebo: 1.5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Power Dissipation: 175 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
0.00001
0.00001
Remark The graphs indicate nominal characteristics.
0.0001
0.0001
0.001
0.001
0.01
0.01
250
200
150
100
100
100
0.1
0.1
50
10
10
0
1
1
0.4
0.4
V
V
CE
CE
TOTAL POWER DISSIPATION
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
vs. AMBIENT TEMPERATURE
= 1 V
= 3 V
0.5
0.5
25
Base to Emitter Voltage V
Base to Emitter Voltage V
Ambient Temperature T
0.6
0.6
50
Mounted on glass epoxy PWB
(1.08 cm
0.7
0.7
75
2
× 1.0 mm (t))
100
0.8
0.8
A
A
BE
BE
(˚C)
= +25°C, unless otherwise specified)
(V)
(V)
125
0.9
0.9
Data Sheet PU10414EJ04V0DS
150
1.0
1.0
0.00001
0.0001
0.001
0.01
100
0.1
0.3
0.2
0.1
10
40
30
20
10
0
1
0
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
V
CE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
= 2 V
Collector to Emitter Voltage V
0.5
Collector to Base Voltage V
Base to Emitter Voltage V
1
2
0.6
200 A
2
4
μ
0.7
NESG3031M05
3
6
0.8
180 A
BE
CB
f = 1 MHz
CE
μ
(V)
I
B
4
8
(V)
0.9
(V)
= 20 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
μ
μ
μ
μ
μ
μ
μ
μ
1.0
10
5
3