NE68133-A CEL, NE68133-A Datasheet - Page 17

• Manufacturer Part Number: NE68133-A
• Description: TRANS NPN 1GHZ SOT-23
• Manufacturer: CEL

Specifications of NE68133-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2dB @ 1GHz
• Gain: 13dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.065 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE68133-T1B-A

BJT NONLINEAR MODEL PARAMETERS
NE68139 NONLINEAR MODEL
SCHEMATIC
(1) Gummel-Poon Model
Parameters
RBM
VAF
VAR
CJE
MJE
CJC
VJE
IKF
ISE
ISC
IRB
VJC
NR
NC
RC
BF
BR
IKR
RE
RB
NF
NE
IS
1.77e-11
2.7e-16
1.2e-12
0.8e-12
Infinity
Infinity
1.2e-5
185.0
0.055
1.02
15.0
12.0
0.77
0.50
0.27
Q1
2.1
1.0
1.0
0.6
3.7
8.0
2.0
0
Parameters
Base
XCJC
MJC
MJS
XTB
CJS
VJS
PTF
XTF
VTF
FC
EG
XTI
TF
ITF
KF
TR
AF
L
BX
(1)
14.0e-12
C
0.3e-9
L
0.750
0.56
0.50
25.0
BEPKG
1.11
B
3.0
0.1
3.0
1.0
Q1
0
0
0
0
0
0
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
Date:
CE
L
C
Parameter
time
capacitance
inductance
resistance
voltage
current
C
Parameters
C
C
L
L
L
C
C
C
L
L
L
L
CEPKG
B
C
E
BX
CX
EX
CX
CB
CE
CBPKG
CEPKG
BEPKG
0.1 to 3.0 GHz
V
6/17/96
CE
Q1
= 2.5 V to 8.0 V, I
Collector
C
= 0.3 mA to 7 mA
0.07e-12
0.01e-12
0.88e-9
0.79e-9
0.7e-9
0.165e-12
0.165e-12
0.01e-12
0.39e-9
0.39e-9
0.2e-9
68139
NE681 SERIES
seconds
farads
henries
ohms
volts
amps
Units