NE68133-A CEL, NE68133-A Datasheet - Page 13

• Manufacturer Part Number: NE68133-A
• Description: TRANS NPN 1GHZ SOT-23
• Manufacturer: CEL

Specifications of NE68133-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2dB @ 1GHz
• Gain: 13dB
• Power - Max: 200mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Emitter Voltage Vceo Max: 10 V
• Emitter- Base Voltage Vebo: 1.5 V
• Continuous Collector Current: 0.065 A
• Power Dissipation: 0.2 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: NE68133-T1B-A

SCHEMATIC
NE68119 NONLINEAR MODEL
BJT NONLINEAR MODEL PARAMETERS
(1) Gummel-Poon Model
Parameters
RBM
VAR
MJE
CJC
CJE
VJE
VJC
IKR
ISC
IRB
VAF
NR
NC
RC
BF
NE
BR
RE
RB
IKF
NF
ISE
IS
1.77e-11
1.2e-12
0.8e-12
2.7e-16
Infinity
1.2e-5
Infinity
185.0
0.055
0.77
0.27
1.02
15.0
Q1
2.1
0.6
3.7
0.5
12
1
1
2
8
0
Parameters
Base
XCJC
MJC
CJS
XTF
VTF
PTF
XTB
VJS
MJS
XTI
ITF
EG
TF
TR
KF
AF
FC
L
BX
14.0e-12
0.3e-9
(1)
0.56
0.75
1.11
0.5
0.1
25
Q1
0
0
0
3
0
0
3
0
1
L
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
UNITS
ADDITIONAL PARAMETERS
MODEL RANGE
Frequency:
Bias:
C
CE
C
time
capacitance
inductance
resistance
voltage
current
Parameter
CEPKG
L
Parameters
C
C
L
L
C
C
L
L
L
CX
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
0.05 to 3.0 GHz
V
CE
Q1
= 2.5 V to 8.0 V, I
Collector
C
= 0.3 mA to 10 mA
0.07e-12
0.01e-12
1.13e-9
0.85e-9
0.18e-12
0.21e-12
0.19e-9
0.19e-9
0.19e-9
68119
NE681 SERIES
seconds
henries
ohms
volts
amps
farads
Units