NE68119-T1-A CEL, NE68119-T1-A Datasheet - Page 14

• Manufacturer Part Number: NE68119-T1-A
• Description: TRANSISTOR NPN 1GHZ SMD
• Manufacturer: CEL

Specifications of NE68119-T1-A

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 10V
• Frequency - Transition: 7GHz
• Noise Figure (db Typ @ F): 1.4dB ~ 1.8dB @ 1GHz ~ 2GHz
• Gain: 10dB ~ 14dB
• Power - Max: 100mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 7mA, 3V
• Current - Collector (ic) (max): 65mA
• Mounting Type: Surface Mount
• Package / Case: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.065 A
• Power Dissipation: 0.1 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SC5007-T1-A; NE68119-ATR

BJT NONLINEAR MODEL PARAMETERS
SCHEMATIC
(1) Gummel-Poon Model
Note:
This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.
NE68130 NONLINEAR MODEL
Parameters
RBM
VAR
MJE
VAF
CJE
VJE
CJC
VJC
IKF
ISE
IKR
ISC
IRB
NE
BR
NR
RE
RB
BF
NF
NC
RC
IS
1.77e-11
2.7e-16
1.2e-12
0.8e-12
Infinity
Infinity
1.2e-5
0.055
1.02
0.77
0.27
185
2.1
0.6
3.7
0.5
Q1
15
12
1
1
0
8
2
Parameters
XCJC
MJC
CJS
MJS
XTF
VTF
PTF
XTB
VJS
ITF
EG
XTI
FC
TR
KF
TF
AF
Base
C
BEPKG
L
14e-12
0.3e-9
BX
0.56
0.75
1.11
Q1
0.5
0.1
25
0
0
0
3
0
0
3
0
1
(1)
L
B
C
C
CBPKG
CB
Emitter
L
L
E
EX
C
CE
Q1
C
CEPKG
A
MODEL RANGE
Frequency:
Bias:
Date:
UNITS
L
CX
DDITIONAL PARAMETERS
Parameters
time
capacitance
inductance
resistance
voltage
current
Parameter
C
C
L
L
C
C
C
L
L
L
Collector
B
E
BX
CX
EX
CB
CE
CBPKG
CEPKG
BEPKG
0.05 to 3.0 GHz
V
10/11/96
CE
= 2.5 V to 8 V, I
NE681 SERIES
seconds
farads
henries
ohms
volts
amps
Units
0.07e-12
0.01e-12
0.12e-12
0.16e-12
0.04e-12
0.52e-9
1.18e-9
C
68130
0.2e-9
0.8e-9
0.2e-9
= 0.3 mA to 10 mA