BFT92W,115 NXP Semiconductors, BFT92W,115 Datasheet - Page 3

• Manufacturer Part Number: BFT92W,115
• Description: TRANS PNP 35MA 15V 4GHZ SOT323
• Manufacturer: NXP Semiconductors

Specifications of BFT92W,115

• Package / Case: SC-70-3, SOT-323-3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 4GHz
• Noise Figure (db Typ @ F): 2.5dB ~ 3dB @ 500MHz ~ 1GHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 15mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 20 @ 15mA @ 10V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 4000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1656-2; 934022960115; BFT92W T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. T
CHARACTERISTICS
T
Note
1. G
May 1994
V
V
V
I
P
T
T
R
I
h
f
C
C
C
G
F
SYMBOL
SYMBOL
SYMBOL
j
C
CBO
T
FE
stg
j
CBO
CEO
EBO
tot
= 25 C (unless otherwise specified).
PNP 4 GHz wideband transistor
th j-s
c
e
re
UM
s
UM
is the temperature at the soldering point of the collector pin.
is the maximum unilateral power gain, assuming s
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain;
note 1
noise figure
PARAMETER
PARAMETER
PARAMETER
open base
open collector
up to T
I
I
open emitter
I
I
f = 500 MHz; T
I
f = 1 MHz
I
f = 1 MHz
f = 1 MHz
I
f = 500 MHz; T
I
f = 1 GHz; T

V

V
E
C
C
E
C
C
C
C
s
s
CE
CE
= 0; V
= i
= 15 mA; V
= 15 mA; V
= i
= 0; V
= 15 mA; V
= 15 mA; V
= 
= 
= 10 V; f = 500 MHz
= 10 V; f = 1 GHz
e
c
opt
opt
= 0; V
= 0; V
s
CONDITIONS
CB
= 93 C; note 1
CB
; I
; I
CONDITIONS
C
C
3
12
= 10 V
= 10 V;
amb
= 5 mA;
= 5 mA;
CB
EB
is zero.
CE
CE
amb
CE
amb
CE
= 10 V;
= 0.5 V;
= 25 C
up to T
= 10 V
= 10 V;
= 10 V;
= 10 V;
= 25 C
= 25 C
G
UM
CONDITIONS
s
= 93 C; note 1
=
10

20








MIN.
log





65

-------------------------------------------------------- dB.

1
MIN.
–

50
4
0.65
0.75
0.5
17
11
2.5
3
s
TYP.
11
s
2
21
 1
20
15
2
25
300
+150
150

VALUE
2
Product specification
MAX.
–
190
50









s
MAX.
22
BFT92W
2

V
V
V
mA
mW
C
C
nA
GHz
pF
pF
pF
dB
dB
dB
dB
UNIT
UNIT
K/W
UNIT