BFG425W,115 NXP Semiconductors, BFG425W,115 Datasheet - Page 5

• Manufacturer Part Number: BFG425W,115
• Description: TRANS NPN 4.5V 25GHZ SOT-343R
• Manufacturer: NXP Semiconductors

Specifications of BFG425W,115

• Package / Case: SOT-343R
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 4.5V
• Frequency - Transition: 25GHz
• Noise Figure (db Typ @ F): 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
• Gain: 20dB
• Power - Max: 135mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 25mA, 2V
• Current - Collector (ic) (max): 30mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 50 @ 25mA @ 2V
• Mounting Style: SMD/SMT
• Configuration: Single Dual Emitter
• Transistor Polarity: NPN
• Maximum Operating Frequency: 25000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 4.5 V
• Emitter- Base Voltage Vebo: 1 V
• Continuous Collector Current: 0.03 A
• Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1644-2; 934047470115; BFG425W T/R

NXP Semiconductors
2010 Sep 15
handbook, halfpage
handbook, halfpage
NPN 25 GHz wideband transistor
(1) V
(2) V
(3) V
Fig.3
V
Fig.5
(GHz)
CE
f T
h FE
120
= 2 V; f = 2 GHz; T
80
40
25
20
15
10
CE
CE
CE
0
5
0
0
1
= 3 V.
= 2 V.
= 1 V.
DC current gain as a function of collector
Transition frequency as a function of
current; typical values.
collector current; typical values.
10
amb
= 25 C.
20
10
I C (mA)
30
I C (mA)
MGG682
MGG684
(1)
(2)
(3)
10
40
2
5
handbook, halfpage
handbook, halfpage
Fig.4
V
Fig.6
I
MSG
C
(dB)
CE
C re
(fF)
= 0; f = 1 MHz.
200
160
120
= 2 V; f = 900 MHz.
30
20
10
80
40
0
0
0
0
Feedback capacitance as a function of
collector-base voltage; typical values.
Maximum stable gain as a function of
collector current; typical values.
1
10
2
20
3
Product specification
30
BFG425W
4
I C (mA)
V CB (V)
MGG685
MGG683
40
5