AT-41533-TR1G Avago Technologies US Inc., AT-41533-TR1G Datasheet - Page 9

• Manufacturer Part Number: AT-41533-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-23
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41533-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 14.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1570-2

AT-41511 Typical Scattering Parameters, Common Emitter, Z
AT-41511 Typical Noise Parameters,
Common Emitter, Z
AT-41533 Typical Scattering Parameters, Common Emitter, Z
AT-41533 Typical Noise Parameters,
Common Emitter, Z
Freq.
Freq.
GHz
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
Freq
GHz
Freq
GHz
0.1
0.9
1.8
2.4
0.1
0.9
1.8
2.4
Mag
Mag
0.55
0.44
0.44
0.44
0.45
0.46
0.46
0.48
0.51
0.57
0.61
0.41
0.11
0.10
0.10
0.14
0.16
0.17
0.20
0.24
0.30
0.37
S
S
11
11
o
F
o
F
Ang
dB
1.6
1.9
2.3
2.7
Ang
-155
-179
dB
1.3
1.6
1.9
2.1
-138
176
159
150
144
133
119
168
156
126
115
108
-65
min
-57
min
= 50 Ω, V
99
83
99
89
75
61
= 50 Ω, V
30.44
20.69
15.83
14.95
11.55
10.03
30.11
18.75
13.87
12.99
9.14
7.61
5.78
3.39
1.49
9.70
8.25
7.45
6.11
4.56
2.80
1.51
CE
dB
dB
CE
Mag
0.08
0.10
0.22
0.32
Mag
0.07
0.12
0.36
0.51
= 8 V, I
= 8 V, I
Γ Γ Γ Γ Γ
Γ Γ Γ Γ Γ
opt
opt
33.264
10.832
32.026
C
6.190
5.588
3.779
3.173
2.865
2.401
1.945
1.477
1.187
Mag
8.664
4.938
4.460
3.054
2.585
2.359
2.020
1.691
1.380
1.190
C
Mag
S
S
= 25 mA
= 25 mA
21
21
Ang
-170
-147
Ang
-134
-109
100
164
10
18
Ang
Ang
142
130
96
81
78
66
59
55
46
35
17
90
77
74
62
55
51
43
32
15
1
0
-39.17
-31.37
-27.54
-26.74
-23.61
-22.16
-21.31
-19.66
-17.72
-15.09
-12.92
-37.72
-26.38
-21.51
-20.63
-17.14
-15.60
-14.66
-13.03
-11.03
-8.31
-6.25
0.20
0.19
0.18
0.18
0.16
0.12
0.15
0.28
dB
R
dB
R
-
-
n
n
o
o
= 50 Ω, V
= 50 Ω, V
0.011
0.027
0.042
0.046
0.066
0.078
0.086
0.104
0.130
0.176
0.226
Mag
0.013
0.048
0.084
0.093
0.139
0.166
0.185
0.223
0.281
0.384
0.487
Mag
S
S
12
12
Figure 20. AT-41511 Gains vs.
Frequency at V
Figure 21. AT-41533 Gains vs.
Frequency at V
9
CE
CE
30
25
20
15
10
30
25
20
15
10
5
0
Ang
5
0
Ang
0
66
61
66
67
67
67
66
65
61
55
48
= 8 V, I
= 8 V, I
73
76
75
74
71
68
66
62
56
45
33
0
MSG
MSG
1
1
FREQUENCY (GHz)
FREQUENCY (GHz)
C
C
S21
MAG
S21
CE
= 25 mA
CE
= 25 mA
Mag
Mag
0.82
0.54
0.50
0.50
0.49
0.50
0.50
0.50
0.49
0.49
0.48
0.76
0.52
0.50
0.50
0.49
0.49
0.49
0.48
0.46
0.43
0.39
2
2
= 8 V, I
= 8 V, I
MAG
S
S
3
3
22
22
MSG
C
C
= 25 mA.
= 25 mA.
Ang
Ang
-17
-21
-22
-23
-29
-32
-35
-40
-48
-63
-80
4
-18
-19
-22
-24
-31
-34
-37
-43
-53
-72
-94
4
MSG
5
5