AT-41533-TR1G Avago Technologies US Inc., AT-41533-TR1G Datasheet - Page 8

• Manufacturer Part Number: AT-41533-TR1G
• Description: IC TRANS NPN GP BIPOLAR SOT-23
• Manufacturer: Avago Technologies US Inc.

Specifications of AT-41533-TR1G

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 12V
• Noise Figure (db Typ @ F): 1dB ~ 1.6dB @ 900MHz ~ 2.4GHz
• Gain: 9dB ~ 14.5dB
• Power - Max: 225mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 12V
• Transition Frequency Typ Ft: 10GHz
• Power Dissipation Pd: 225mW
• Dc Collector Current: 50mA
• Dc Current Gain Hfe: 150
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 516-1570-2

AT-41511 Typical Scattering Parameters, Common Emitter, Z
AT-41511 Typical Noise Parameters,
Common Emitter, Z
AT-41533 Typical Scattering Parameters, Common Emitter, Z
AT-41533 Typical Noise Parameters,
Common Emitter, Z
Freq.
Freq.
GHz
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
Freq
Freq
GHz
GHz
0.1
0.9
1.8
2.4
0.1
0.9
1.8
2.4
Mag
Mag
0.75
0.47
0.41
0.40
0.39
0.40
0.40
0.42
0.44
0.51
0.56
0.65
0.20
0.11
0.09
0.11
0.13
0.14
0.17
0.22
0.28
0.35
S
S
11
11
o
F
o
F
Ang
dB
1.1
1.3
1.6
1.8
Ang
dB
0.8
1.1
1.5
1.7
-119
-155
-161
-100
-146
-161
174
162
155
143
126
104
144
125
116
104
-36
min
min
-37
= 50 Ω, V
= 50 Ω, V
87
91
77
62
27.71
21.24
16.80
15.96
12.66
11.16
10.29
27.45
18.60
13.89
13.03
8.77
6.95
4.60
2.73
9.77
8.34
7.53
6.20
4.66
2.90
1.61
CE
CE
dB
dB
Mag
Mag
0.40
0.33
0.27
0.35
0.40
0.20
0.32
0.49
= 8 V, I
= 8 V, I
Γ Γ Γ Γ Γ
Γ Γ Γ Γ Γ
opt
opt
24.305
11.535
23.576
C
C
6.921
6.281
4.294
3.615
3.269
2.745
2.226
1.698
1.370
8.509
4.947
4.482
3.081
2.611
2.379
2.041
1.710
1.396
1.204
Mag
Mag
S
S
= 10 mA
= 10 mA
21
21
Ang
Ang
-154
-121
135
178
62
13
93
7
Ang
Ang
155
106
145
88
84
70
63
59
50
38
19
97
81
78
64
58
53
45
33
16
3
1
-37.72
-28.87
-26.20
-25.68
-23.10
-21.83
-21.11
-19.66
-17.86
-15.44
-13.39
-35.92
-26.20
-21.83
-20.92
-17.59
-16.03
-15.09
-13.47
-11.40
-8.61
-6.45
0.27
0.20
0.13
0.10
0.18
0.12
0.09
0.17
dB
R
dB
R
-
-
n
n
0.013
0.036
0.049
0.052
0.070
0.081
0.088
0.104
0.128
0.169
0.214
Mag
0.016
0.049
0.081
0.090
0.132
0.158
0.176
0.212
0.269
0.371
0.476
Mag
o
o
S
S
= 50 Ω, V
= 50 Ω, V
12
12
Figure 18. AT-41511 Gains vs.
Frequency at V
Figure 19. AT-41533 Gains vs.
Frequency at V
8
30
25
20
15
10
30
25
20
15
10
5
0
5
0
Ang
Ang
0
73
53
55
56
58
59
58
58
55
50
45
73
69
71
70
69
67
65
62
57
47
35
0
CE
CE
MSG
MSG
= 8 V, I
= 8 V, I
1
1
S21
FREQUENCY (GHz)
MAG
FREQUENCY (GHz)
S21
CE
CE
Mag
Mag
0.92
0.60
0.51
0.50
0.48
0.48
0.48
0.48
0.47
0.46
0.46
0.88
0.57
0.54
0.53
0.52
0.51
0.51
0.50
0.49
0.46
0.43
2
2
= 8 V, I
C
C
= 8 V, I
MAG
= 10 mA
= 10 mA
S
S
3
3
22
22
MSG
C
C
= 10 mA.
= 10 mA.
Ang
Ang
4
-13
-27
-28
-29
-32
-35
-37
-41
-48
-61
-76
-52
-71
-92
4
-15
-23
-25
-26
-32
-35
-38
-43
MSG
5
5