BFT92,215 NXP Semiconductors, BFT92,215 Datasheet - Page 2

• Manufacturer Part Number: BFT92,215
• Description: TRANS PNP 25MA 15V 5GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFT92,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 5GHz
• Noise Figure (db Typ @ F): 2.5dB @ 500MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 14mA, 10V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 20 @ 14 mA @ 10 V
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: PNP
• Maximum Operating Frequency: 5000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 175 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 20V
• Emitter-base Voltage: 2V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 20
• Frequency (max): 5GHz
• Operating Temp Range: -65C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1655-2; 933347730215; BFT92 T/R

NXP Semiconductors
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
QUICK REFERENCE DATA
Note
1. T
November 1992
V
V
I
P
f
C
G
F
d
SYMBOL
C
T
im
CBO
CEO
tot
PNP 5 GHz wideband transistor
re
UM
s
is the temperature at the soldering point of the collector tab.
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
noise figure
intermodulation distortion
PARAMETER
PINNING
PIN
1
2
3
base
emitter
collector
open emitter
open base
up to T
I
I
I
f = 500 MHz; T
I
T
I
V
f
C
C
C
C
C
(pq-r)
Code: W1p
amb
o
= 14 mA; V
= 2 mA; V
= 14 mA; V
= 5 mA; V
= 14 mA; V
= 150 mV; T
DESCRIPTION
= 25 C
= 493.25 MHz
2
s
= 95 C; note 1
CONDITIONS
CE
CE
CE
CE
amb
CE
amb
= 10 V; f = 1 MHz
= 10 V; f = 500 MHz;
= 10 V; f = 500 MHz
= 10 V;
= 10 V; R
= 25 C
= 25 C;
lfpage
L
= 75 ;
Top view
1
Fig.1 SOT23.




5
0.7
18
2.5
60
Product specification
TYP.
3
MSB003
20
15
25
300





MAX.
BFT92
2
V
V
mA
mW
GHz
pF
dB
dB
dB
UNIT