BFR505,215 NXP Semiconductors, BFR505,215 Datasheet - Page 4

• Manufacturer Part Number: BFR505,215
• Description: TRANS NPN 15V 9GHZ SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFR505,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 9GHz
• Noise Figure (db Typ @ F): 1.2dB ~ 2.1dB @ 900MHz
• Power - Max: 150mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 6V
• Current - Collector (ic) (max): 18mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 60 @ 5mA @ 6V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 9000 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.018 A
• Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1988-2; 934018740215; BFR505 T/R

Philips Semiconductors
9397 750 13396
Product data sheet
Fig 1. Power derating curve.
(mW)
P
tot
200
150
100
50
0
0
50
Table 7:
T
[1]
[2]
Symbol Parameter
F
P
ITO
j
L1
= 25 C unless otherwise specified.
100
G
I
and f
G
C
UM
UM
= 5 mA; V
is the maximum unilateral power gain, assuming S
(2q p)
=
noise figure
output power at 1 dB
gain compression
third order intercept
point
Characteristics
10 log
= 904 MHz.
150
CE
= 6 V; R
T
------------------------------------------------------dB
s
1
( C)
mra718
–
S
200
11
L
Rev. 03 — 20 July 2004
= 50 ; T
S
2
21
…continued
1
2
–
S
amb
22
Conditions
V
f = 900 MHz
V
T
V
T
I
R
T
C
s
s
amb
s
amb
amb
CE
CE
CE
L
2
= 5 mA; V
=
=
=
= 25 C; f
Fig 2. DC current gain as a function of collector
= 50 ;
= 6 V;T
= 6 V;
= 6 V;
= 25 C; f = 900 MHz
= 25 C; f = 2 GHz
= 25 C; f = 900 MHz
opt
opt
opt
h
FE
250
200
150
100
; I
; I
; I
50
C
C
C
0
10
V
current.
p
amb
= 5 mA;
= 5 mA;
= 5 mA;
CE
CE
= 900 MHz; f
3
= 6 V.
= 6 V;
= 25 C;
12
10
is zero and
2
q
= 902 MHz; measured at f
NPN 9 GHz wideband transistor
10
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[2]
1
Min
-
-
-
-
-
1
Typ
1.2
1.6
1.9
4
10
10
BFR505
I
C
mra719
(mA)
(2p q)
Max
1.7
2.1
-
-
-
10
2
= 898 MHz
Unit
dB
dB
dB
dBm
dBm
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