BFS17A,215 NXP Semiconductors, BFS17A,215 Datasheet - Page 3

• Manufacturer Part Number: BFS17A,215
• Description: TRANS NPN 25MA 15V 3GHZ SOT23
• Manufacturer: NXP Semiconductors

Specifications of BFS17A,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 15V
• Frequency - Transition: 2.8GHz
• Noise Figure (db Typ @ F): 2.5dB @ 800MHz
• Power - Max: 300mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 2mA, 1V
• Current - Collector (ic) (max): 25mA
• Mounting Type: Surface Mount
• Dc Current Gain Hfe Max: 25 @ 2mA @ 1V
• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 2800 MHz (Typ)
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 2.5 V
• Continuous Collector Current: 0.025 A
• Power Dissipation: 300 mW
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 25V
• Emitter-base Voltage: 2.5V
• Collector Current (dc) (max): 25mA
• Dc Current Gain (min): 25
• Frequency (max): 2.8GHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1653-2; 933750250215; BFS17A T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. d
September1995
R
I
h
f
C
C
C
G
F
V
SYMBOL
SYMBOL
j
CBO
T
FE
= 25 C unless otherwise specified.
O
NPN 3 GHz wideband transistor
th j-s
c
e
re
UM
V
V
V
measured at f
s
im
p
q
r
UM
= V
is the temperature at the soldering point of the collector pin.
= V
= V
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
O
O
O
; f
6 dB; f
6 dB; f
thermal resistance from junction to soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
note 1
noise figure
output voltage
p
= 795.25 MHz;
(p+qr)
r
q
= 805.25 MHz;
PARAMETER
= 803.25 MHz;
= 793.25 MHz.
PARAMETER
C
= 14 mA; V
CE
I
I
I
I
T
I
T
I
I
I
I
f = 800 MHz; T
note 2
E
C
C
C
E
C
C
C
C
amb
amb
= 0; V
= 0; V
= 2 mA; V
= 25 mA; V
= 25 mA; V
= 0; V
= 0; V
= 14 mA; V
= 2 mA; V
= 10 V; R
= 25 C
= 25 C
CB
CB
EB
CE
= 10 V
= 10 V; f = 1 MHz;
= 0.5 V; f = 1 MHz
= 5 V; f = 1 MHz
CONDITIONS
L
3
CE
CE
12
= 75 ; T
CE
CE
CE
amb
is zero and
= 1 V; T
= 5 V; Z
= 1 V; T
= 5 V; f = 500 MHz;
= 10 V; f = 800 MHz 
= 25 C
up to T
amb
amb
S
amb
= 60 ;
CONDITIONS
s
= 25 C;
= 25 C
G
= 70 C; note 1
= 25 C
UM
=
10 log

25
25






MIN.
--------------------------------------------------------- -

1
–

90
90
2.8
0.7
1.25
0.6
13.5
2.5
150
S
TYP.
11
VALUE
260
Product specification
S
2
 1
21

2
50









–
MAX.
BFS17A
S
22
2
UNIT
K/W

nA
GHz
pF
pF
pF
dB
dB
mV
UNIT
dB.