BG 5130R E6327 Infineon Technologies, BG 5130R E6327 Datasheet - Page 10

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BG 5130R E6327

Manufacturer Part Number
BG 5130R E6327
Description
MOSFET N-CH DUAL 8V SOT-363R
Manufacturer
Infineon Technologies
Datasheets

Specifications of BG 5130R E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
24dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.3dB
Current - Test
10mA
Voltage - Test
3V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
35@3VdB
Noise Figure (max)
1.3(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.041S
Input Capacitance (typ)@vds
2.7@3V@Gate 1pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
BG5130RE6327XT
SP000101237
Package Outline
Foot Print
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Pin 1
marking
Pin 1 marking
Laser marking
Pin 1
marking
0.65
1
6
0.2
2
±0.2
+0.1
-0.05
P
0.65
5
2
ackage SOT363
4
3
2.15
0.65
6x
4
0.1
0.3
M
10
0.65
0.1 MAX.
0.2
0.1
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
M
A
0.2
0.9
0.15
1.1
±0.1
+0.1
-0.05
A
BG5130R
2007-06-01

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