MRF19045LR3 Freescale Semiconductor, MRF19045LR3 Datasheet - Page 5

• Manufacturer Part Number: MRF19045LR3
• Description: IC MOSFET RF N-CHAN NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF19045LR3

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 14.5dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 550mA
• Voltage - Test: 26V
• Power - Output: 45W
• Package / Case: NI-400
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
15.5
15.0
14.5
14.0
13.5
40
35
30
25
20
15
10
5
0
Figure 3. 2-Carrier N - CDMA ACPR, IM3, Power Gain
−30
−35
−40
−45
−50
−55
1
0
V
I
f1 = 1960 MHz, f2 = 1960.1 MHz
0
DQ
DD
and Drain Efficiency versus Output Power
V
I
f1 = 1960 MHz, f2 = 1962.5 MHz
P
= 450 mA
2
DQ
= 26 Vdc
DD
out
1
350 mA
1
P
P
= 550 mA
Figure 7. 2-Carrier N-CDMA Power Gain
, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
out
= 26 Vdc
out
3
, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
2
, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
2
450 mA
Figure 5. 2-Carrier N-CDMA IM3
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF)
4
3
3
550 mA
versus Output Power
versus Output Power
4
5
4
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%)
700 mA
550 mA
450 mA
350 mA
5
6
V
f1 = 1960 MHz, f2 = 1962.5 MHz
5
DD
700 mA
= 26 Vdc, I
6
6
7
7
7
8
DQ
8
8
= 550 mA
9
9
ACPR
9
G
IM3
10
TYPICAL CHARACTERISTICS
η
ps
10
10
11
11
11
12
12
12
−30
−35
−40
−45
−50
−55
−60
−65
−70
70
60
50
40
30
20
10
Figure 8. CW Output Power, Power Gain and Drain
Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain, IRL
35
30
25
20
15
10
0
5
0.0
1900
−45
−50
−55
−60
−65
−70
0
0.5
and Drain Efficiency versus Output Power
350 mA
V
V
I
f1 = 1960 MHz, f2 = 1962.5 MHz
1.2288 MHz Source Channel Bandwidth
9 CH FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01%)
P
DQ
DD
Efficiency versus Input Power
DD
out
1
= 550 mA
, OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA)
1.0
= 26 Vdc, I
= 26 Vdc
Figure 6. 2-Carrier N-CDMA ACPR
ACPR
450 mA
550 mA
G
P
IM3
1930
η
2
ps
in
V
I
f = 1960 MHz
, INPUT POWER (WATTS CW)
DQ
700 mA
f, FREQUENCY (MHz)
DD
IRL
1.5
3
= 550 mA
versus Output Power
= 26 Vdc
DQ
= 550 mA 2.5 MHz Carrier Spacing
4
2.0
P 1dB
MRF19045LR3 MRF19045LSR3
1.2288 MHz Source Channel Bandwidth,
9 CH FWD Carrier
(9.8 dB Peak/Avg. Ratio @ 0.01%
Probability) (CCDF)
1960
5
2.5
6
P out
G ps
3.0
η
7
1990
8
3.5
9
4.0
P 3dB
10
2020
4.5
11
17
16
15
14
13
12
11
10
0
−10
−20
−30
−40
−50
−60
12
5