MRF19045LR3 Freescale Semiconductor, MRF19045LR3 Datasheet

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MRF19045LR3

Manufacturer Part Number
MRF19045LR3
Description
IC MOSFET RF N-CHAN NI-400
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF19045LR3

Transistor Type
N-Channel
Frequency
1.93GHz
Gain
14.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
550mA
Voltage - Test
26V
Power - Output
45W
Package / Case
NI-400
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF19045LR3
Manufacturer:
FREESCALE
Quantity:
28
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical CDMA Performance @ 1930 MHz, 26 Volts, I
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1960 MHz, 45 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Multi - carrier IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power
Derate above 25°C
Output Power — 9.5 Watts Avg.
Power Gain — 14.9 dB
Efficiency — 23.5%
Adjacent Channel Power —
IM3 — - 37 dBc
Select Documentation/Application Notes - AN1955.
885 kHz: - 50 dBc @ 30 kHz BW
C
= 25°C
Test Conditions
Characteristic
Rating
DQ
= 550 mA
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF19045
MRF19045LSR3
1930 - 1990 MHz, 45 W, 26 V
MRF19045LR3
LATERAL N - CHANNEL
CASE 465E - 04, STYLE 1
MRF19045LR3 MRF19045LSR3
CASE 465F - 04, STYLE 1
RF POWER MOSFETs
M3 (Minimum)
2 (Minimum)
MRF19045LSR3
- 65 to +150
MRF19045LR3
- 0.5, +65
- 0.5, +15
Value
Value
Class
0.60
1.65
NI - 400S
105
150
200
NI - 400
(1)
Rev. 9, 10/2008
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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MRF19045LR3 Summary of contents

Page 1

... MHz LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 1 CASE 465F - 04, STYLE 1 Symbol V DSS stg Symbol R θJC MRF19045LR3 MRF19045LSR3 Rev. 9, 10/2008 NI - 400 MRF19045LR3 NI - 400S MRF19045LSR3 Value Unit - 0.5, +65 Vdc - 0.5, +15 Vdc 105 W 0.60 W/° +150 °C 150 °C 200 °C ...

Page 2

... Input Return Loss ( Vdc 9.5 W Avg Carrier N - CDMA, DD out I = 550 mA 1930 MHz 1932.5 MHz Compression Point out ( Vdc 550 mA 1930 MHz Part is internally matched both on input and output. MRF19045LR3 MRF19045LSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS V GS(th) V GS(Q) V DS(on) g ...

Page 3

... Beryllium Copper Wear Blocks (0.005″ x 0.150″ x 0.350″) Nominal C10 C8 C9 C11 Z9 Z10 Z11 C13 0.216″ x 0.047″ Microstrip 0.519″ x 0.254″ Microstrip 0.874″ x 0.081″ Microstrip 0.645″ x 0.081″ Microstrip Arlon GX0300-55-22, 30 mils, ε = 2.55 r MRF19045LR3 MRF19045LSR3 V SUPPLY + C12 RF OUTPUT 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Layout MRF19045LR3 MRF19045LSR3 ...

Page 5

... OUTPUT POWER (WATTS) (Avg. 2−Carrier N−CDMA) out Figure 6. 2-Carrier N-CDMA ACPR versus Output Power P out P 1dB P 3dB η Vdc 550 1960 MHz 1.0 1.5 2.0 2.5 3.0 3.5 4 INPUT POWER (WATTS CW) in Efficiency versus Input Power MRF19045LR3 MRF19045LSR3 0 −10 −20 −30 −40 −50 −60 2020 4.5 5 ...

Page 6

... MHz 1960.1 MHz −40 −50 3rd Order −60 −70 5th Order −80 7th Order −90 0.1 1 OUTPUT POWER (WATTS PEP) out Figure 13. CW Two-Tone Intermodulation Distortion Products versus Output Power MRF19045LR3 MRF19045LSR3 6 TYPICAL CHARACTERISTICS −25 40 −30 35 −35 30 −40 25 −45 20 −50 15 −55 10 − ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load f = 1990 MHz load Ω Output Matching Network MRF19045LR3 MRF19045LSR3 7 ...

Page 8

... G SEE NOTE (LID) ccc aaa (INSULATOR bbb ccc (LID SEATING A PLANE (FLANGE) M (INSULATOR) aaa MRF19045LR3 MRF19045LSR3 8 PACKAGE DIMENSIONS 2X Q bbb bbb ccc (LID (INSULATOR) T SEATING PLANE aaa CASE 465E - 04 ISSUE 400 MRF19045LR3 (LID) ccc (INSULATOR) aaa (FLANGE) CASE 465F - 04 ISSUE 400S ...

Page 9

... Oct. 2008 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779 • Data sheet archived. Part no longer manufactured. • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF19045LR3 MRF19045LSR3 9 ...

Page 10

... P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 303 - 675 - 2140 Fax 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF19045LR3 MRF19045LSR3 Document Number: MRF19045 Rev. 9, 10/2008 10 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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