MRF6S21140HR5 Freescale Semiconductor, MRF6S21140HR5 Datasheet - Page 5

• Manufacturer Part Number: MRF6S21140HR5
• Description: MOSFET RF N-CHAN 28V 30W NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21140HR5

• Transistor Type: N-Channel
• Frequency: 2.11GHz
• Gain: 15.5dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: NI-880
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
17
16
15
14
13
12
1
600 mA
1500 mA
1200 mA
900 mA
Figure 5. Two- -Tone Power Gain versus
V
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
I
DQ
DD
= 1800 mA
= 28 Vdc
P
out
, OUTPUT POWER (WATTS) PEP
Figure 3. 2- -Carrier W- -CDMA Broadband Performance @ P
Figure 4. 2- -Carrier W- -CDMA Broadband Performance @ P
Output Power
10
15.6
15.5
15.4
15.3
15.2
15.1
14.9
14.8
14.7
14.6
14.5
14.4
15
15
2060
2060
V
I
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth,
PAR = 8.5 dB @ 0.01% Probability (CCDF)
DQ
DD
= 1200 mA, 2--Carrier W--CDMA,
= 28 Vdc, P
2080
2080
2100
2100
V
I
10 MHz Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
out
100
DQ
TYPICAL CHARACTERISTICS
DD
= 30 W (Avg.),
= 1200 mA, 2--Carrier W--CDMA,
= 28 Vdc, P
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
2120
2120
out
2140
2140
400
= 60 W (Avg.),
2160
2160
2180
--55
2180
--20
--25
--30
--35
--40
--45
--50
--60
1
Figure 6. Third Order Intermodulation Distortion
V
f1 = 2135 MHz, f2 = 2145 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
DD
2200
2200
= 28 Vdc
I
η
ACPR
DQ
η
IRL
IM3
ACPR
G
IRL
IM3
G
D
D
ps
ps
= 600 mA
2220
2220
900 mA
P
30
28
26
--32
--36
--40
out
42
40
38
--24
--27
--30
out
--44
--33
out
, OUTPUT POWER (WATTS) PEP
versus Output Power
MRF6S21140HR3 MRF6S21140HSR3
= 30 Watts Avg.
= 60 Watts Avg.
10
--12
--15
--18
--21
--12
--15
--18
--21
1800 mA
1500 mA
1200 mA
100
400
5