MRF6S21140HR5 Freescale Semiconductor, MRF6S21140HR5 Datasheet

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MRF6S21140HR5

Manufacturer Part Number
MRF6S21140HR5
Description
MOSFET RF N-CHAN 28V 30W NI-880
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6S21140HR5

Transistor Type
N-Channel
Frequency
2.11GHz
Gain
15.5dB
Voltage - Rated
68V
Current Rating
10µA
Current - Test
1.2A
Voltage - Test
28V
Power - Output
30W
Package / Case
NI-880
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6S21140HR5
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
t o 2 1 7 0 M H z . S u i t a b l e f o r T D M A , C D M A a n d m u l t i c a r r i e r a m p l i f i e r
applications. To be used in Class AB for PCN--PCS/cellular radio and WLL
applications.
• Typical 2--carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 140 Watts CW
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W--CDMA base station applications with frequencies from 2110
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
P
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Case Temperature 80°C, 140 W CW
Case Temperature 75°C, 30 W CW
out
Power Gain — 15.5 dB
Drain Efficiency — 27.5%
IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — --41 dBc in 3.84 MHz Channel Bandwidth
calculators by product.
Documentation/Application Notes -- AN1955.
= 30 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz,
(1,2)
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 1200 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
Document Number: MRF6S21140H
J
CASE 465B- -03, STYLE 1
CASE 465C- -02, STYLE 1
2110- -2170 MHz, 30 W AVG., 28 V
MRF6S21140HR3 MRF6S21140HSR3
MRF6S21140HSR3
MRF6S21140HSR3
MRF6S21140HR3
MRF6S21140HR3
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -880S
NI- -880
-- 65 to +150
2 x W- -CDMA
Value
--0.5, +68
--0.5, +12
Value
0.35
0.38
150
225
(2,3)
Rev. 5, 2/2010
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRF6S21140HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2004--2007, 2010. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

Page 2

... Min Typ Max Unit — — 10 μAdc — — 1 μAdc — — 1 μAdc Vdc 2 2.8 4 Vdc 0.1 0.21 0.3 Vdc — 2 — Avg 2112.5 MHz out 14.5 15.5 17 27.5 — % — --37 --35 dBc — --41 --38 dBc — --15 -- Device Data Freescale Semiconductor ...

Page 3

... C5, C12, C13, C14, C15 10 μF Chip Capacitors C6, C19 0.2 pF Chip Capacitors C7 0.5 pF Chip Capacitor C16 220 μ Electrolytic Capacitor, Radial C17, C18 0.1 pF Chip Capacitors R1 kΩ, 1/4 W Chip Resistors R3 10 Ω, 1/4 W Chip Resistor RF Device Data Freescale Semiconductor C17 DUT C2 C18 Z7 C11 Z8 0.531″ ...

Page 4

... C19 Figure 2. MRF6S21140HR3(HSR3) Test Circuit Component Layout MRF6S21140HR3 MRF6S21140HSR3 4 C10 C4 C3 C12 C13 C17 C18 C14 C15 C11 MRF6S21140H Rev C16 Device Data Freescale Semiconductor ...

Page 5

... Vdc 2135 MHz 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two- -Tone Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS η (Avg.), out G ps IRL IM3 ACPR 2100 2120 2140 ...

Page 6

... Ideal P3dB = 52.6 dBm (180 W) Actual Vdc 1200 Pulsed CW, 8 μsec(on), 1 msec(off 2140 MHz INPUT POWER (dBm) in Input Power --30_C 25_C 85_C T = --30_C C 25_C G ps 85_C η 100 1000 P , OUTPUT POWER (WATTS) CW out versus CW Output Power 250 RF Device Data Freescale Semiconductor ...

Page 7

... MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W- -CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single- -Carrier Test Signal RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (°C) ...

Page 8

... Test circuit impedance as measured from source gate to ground. = Test circuit impedance as measured load from drain to ground. Device Input Matching Under Network Test Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6S21140HR3 MRF6S21140HSR3 9 ...

Page 10

... MRF6S21140HR3 MRF6S21140HSR3 10 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF6S21140HR3 MRF6S21140HSR3 11 ...

Page 12

... MRF6S21140HR3 MRF6S21140HSR3 12 RF Device Data Freescale Semiconductor ...

Page 13

... Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232 • Added On Characteristic V • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software Device Data Freescale Semiconductor REVISION HISTORY Description the RF test condition voltage callout for V ...

Page 14

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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