PD55008TR STMicroelectronics, PD55008TR Datasheet - Page 5

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PD55008TR

Manufacturer Part Number
PD55008TR
Description
IC TRANS RF PWR LDMOST PWRSO-10
Manufacturer
STMicroelectronics
Datasheets

Specifications of PD55008TR

Transistor Type
LDMOS
Frequency
500MHz
Gain
17dB
Voltage - Rated
40V
Current Rating
4A
Current - Test
150mA
Voltage - Test
12.5V
Power - Output
8W
Package / Case
PowerSO-10 Exposed Bottom Pad
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
4A
Drain Source Voltage (max)
40V
Output Power (max)
8W(Min)
Power Gain (typ)@vds
17dB
Frequency (max)
1GHz
Package Type
PowerSO-10RF (Formed lead)
Pin Count
4
Forward Transconductance (typ)
1.6S
Input Capacitance (typ)@vds
58@12.5VpF
Output Capacitance (typ)@vds
38@12.5VpF
Reverse Capacitance (typ)
2.8@12.5VpF
Operating Temp Range
-65C to 165C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
52800mW
Vswr (max)
20(Min)
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PD55008TR-E
Manufacturer:
ST
0
Part Number:
PD55008TR-E
Manufacturer:
ST
Quantity:
20 000
TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
Output Power vs. Gate-Source Voltage
Drain Efficiency vs. Output Power
13
12
10
11
9
8
7
6
5
4
3
10
12
8
6
4
2
0
9
60
50
40
30
20
10
0
1
10
2
VGS, GATE-SOURCE VOLTAGE (V)
1
3
VDD, SUPPLY VOLTAGE (V)
11
4
Output Power (W)
500 MHz
500 MHz
12
2
5
(PD55008)
6
13
480 MHz
850 MHz
Idq= 150 mA
Pin= 21.7 dBm
7
3
800 MHz
Idq = 250mA
480 MHz
V
Pin= 21.7 dBm
Vdd = 12.5V
520 MHz
520 MHz
14
DD
= 12.5 V
8
900 MHz
9
15
4
Drain Efficiency vs. Supply Voltage
Output Power vs. Input Power
Input Return Loss vs. Output Power
70
60
50
40
30
20
-10
-15
-20
-25
-30
-5
0
10
9
8
6
4
2
0
0
0
900 MHz
850 MHz
1
10
800 MHz
0.1
2
VDD, SUPPLY VOLTAGE (V)
11
0.2
3
Output Power (W)
Input Power (W)
PD55008 - PD55008S
4
12
480 MHz
0.3
5
800 MHz
13
0.4
6
520 MHz
500 MHz
Idq= 150 mA
Pin= 21.7 dBm
850 MHz
14
900 MHz
7
Idq = 250mA
Idq = 250mA
Vdd = 12.5V
Vdd = 12.5V
0.5
8
15
5/18
0.6
9

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