ATF-55143-TR1 Avago Technologies US Inc., ATF-55143-TR1 Datasheet - Page 13

• Manufacturer Part Number: ATF-55143-TR1
• Description: IC TRANS E-PHEMT 2GHZ SOT-343
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-55143-TR1

• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Gain: 17.7dB
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.6dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.4dBm
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 516-1508-2

13
ATF-55143 Typical Scattering Parameters, V
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Typical Noise Parameters, V
Freq
GHz
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
Notes:
1. F
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
Refer to the noise parameter application section for more information.
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
min
values at 2 GHz and higher are based on measurements while the F
Mag.
0.996
0.937
0.840
0.819
0.712
0.646
0.631
0.571
0.531
0.499
0.512
0.529
0.552
0.573
0.609
0.684
0.744
0.786
0.816
0.842
0.870
0.866
0.882
0.927
F
dB
0.19
0.25
0.26
0.41
0.42
0.49
0.59
0.72
0.88
1.02
1.06
1.2
1.37
1.53
1.66
min
S
11
Ang.
-7.9
-38.1
-64.1
-70.1
-95.7
-112.8
-116.8
-135.8
-153.9
171.8
140.9
116
94.7
73.9
55.1
37.3
21.6
7.9
-7.2
-22.8
-37.1
-50.3
-59.7
-69.9
Γ
Mag.
0.59
0.5
0.52
0.44
0.43
0.34
0.27
0.17
0.19
0.24
0.25
0.39
0.47
0.57
0.32
opt
DS
= 3V, I
Γ
Ang.
18.4
25.5
30.7
50.6
54.5
65.1
84.7
132.6
-156.2
-125.3
-118.8
-88.8
-62.7
-43.1
-27
opt
dB
24.3
23.64
22.44
22.11
20.43
19.2
18.91
17.59
16.42
14.49
12.84
11.35
10.07
8.91
7.94
7.05
5.91
4.83
3.86
2.93
1.56
-0.01
-1.4
-2.55
DS
= 30 mA
R
0.09
0.09
0.09
0.08
0.08
0.08
0.07
0.06
0.06
0.09
0.1
0.17
0.28
0.43
0.65
n/50
Mag.
16.407
15.205
13.246
12.753
10.507
9.117
8.823
7.578
6.625
5.303
4.386
3.693
3.188
2.79
2.496
2.251
1.975
1.744
1.56
1.401
1.197
0.998
0.851
0.746
DS
S
21
= 3V, I
DS
G
dB
26.27
24.41
23.98
20.51
20.18
18.92
17.28
15.33
13.61
12.71
12.52
11.73
11.08
10.41
9.58
Ang.
173.9
150.4
130.9
126.6
108.4
96.4
93.7
80.9
69.4
48.1
28.1
9.4
-8.3
-25.6
-42.7
-61.3
-79.5
-96.4
-113.9
-132.6
-151.1
-168.2
177
161.2
a
= 30 mA
mins
below 2 GHz have been extrapolated. The F
0.078
0.085
0.092
0.096
0.107
0.118
0.123
0.133
0.128
0.12
0.115
Mag.
0.005
0.021
0.034
0.036
0.046
0.051
0.052
0.057
0.062
0.071
0.128
0.131
0.122
S
12
Ang.
85.6
68.8
56.1
53.5
43.4
37.7
36.6
31.3
26.6
18.1
9.2
0.7
-9
-18.6
-25.8
-39.2
-51.9
-64.3
-77.5
-91.7
-106
-119.1
-130.8
-144.8
Figure 32. MSG/MAG and |S
Frequency at 3V, 30 mA.
40
35
30
25
20
15
10
-5
5
0
0
Mag.
0.729
0.683
0.620
0.601
0.531
0.488
0.479
0.437
0.398
0.328
0.273
0.242
0.214
0.179
0.134
0.064
0.075
0.141
0.187
0.250
0.367
0.467
0.543
0.602
|S
21
MSG
|
2
S
5
min
22
FREQUENCY (GHz)
values are based on a set of
Ang.
-4.5
-21.2
-34.3
-36.8
-46.5
-51.8
-52.9
-57.7
-61.8
-71.6
-84.7
-98.5
-112.9
-120.5
-128.4
-173.3
87.5
49.7
26.4
5.1
-12.6
-24.8
-38.2
-52.8
10
min
MAG
is calculated.
21
MSG/MAG
dB
35.16
28.60
25.91
25.49
23.59
22.52
22.30
21.24
20.29
18.73
16.32
14.36
12.98
11.65
10.92
10.93
10.53
10.16
9.84
9.51
8.39
6.39
5.77
8.12
15
|
2
vs.
20