BF 5020W E6327 Infineon Technologies, BF 5020W E6327 Datasheet - Page 3
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BF 5020W E6327
Manufacturer Part Number
BF 5020W E6327
Description
MOSFET N-CH 8V 25MA SOT-343
Manufacturer
Infineon Technologies
Datasheet
1.BF_5020_E6327.pdf
(11 pages)
Specifications of BF 5020W E6327
Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
N-Channel
Frequency
800MHz
Gain
26dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.2dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000306870
1
Electrical Characteristics at T
Parameter
AC Characteristics - (verified by random sampling)
Forward transconductance
V
Gate1 input capacitance
V
Output capacitance
V
Power gain
V
f = 800 MHz
V
f = 45 MHz
Noise figure
V
f = 800 MHz
V
f = 45 MHz
Gain control range
V
Cross-modulation
AGC = 0
AGC = 10 dB
AGC = 40 dB
Input level for k = 1%; f
DS
DS
DS
DS
DS
DS
DS
DS
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, V
D
D
D
D
D
D
D
G2S
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 10 mA, V
= 4...0 V
1)
, V
w
= 50 MHz, f
DS
G2S
G2S
G2S
G2S
G2S
G2S
G2S
= 5 V, R
= 4 V
= 4 V
= 4 V
= 4 V,
= 4 V,
= 4 V,
= 4 V,
unw
A
= 25°C, unless otherwise specified
G1
= 60 MHz
= 120 kΩ
3
Symbol
g
C
C
G
F
∆G
X
fs
mod
g1ss
dss
p
p
min.
-
-
-
-
-
-
-
-
-
-
-
Values
106
typ.
2.4
1.2
0.8
98
96
34
26
32
45
1
max.
BF5020...
2009-10-01
-
-
-
-
-
-
-
-
-
-
-
Unit
mS
pF
dB
dB
dBµV