BG 3430R E6327 Infineon Technologies, BG 3430R E6327 Datasheet - Page 5

• Manufacturer Part Number: BG 3430R E6327
• Description: MOSFET N-CH DUAL 8V 25MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3430R E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 25dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000240529

a) shows pinning of BG3430R.
Functional diagram
(RFin
(RFin
G1
G1
V
B
GG
A
B
A
)
)
switch
Int.
G2
G2
Rg1
(AGC)
(Ground)
G2
V
Amp. B
Amp. A
GG
S
S
S
(RFout
(RFout
D
D
B
B
A
)
A
)
5
Amp. A
Amp. B
V
V
gg
gg
= 0 V : Amp. A is OFF ; Amp. B is ON
= 5 V : Amp. A is ON ; Amp. B is OFF
Amp. A and Amp. B share
bias network partially integrated
bias network fully
G2 and S pins
BG3430R
2009-10-01
integrated