BG 3130 E6327 Infineon Technologies, BG 3130 E6327 Datasheet - Page 5

• Manufacturer Part Number: BG 3130 E6327
• Description: MOSFET N-CH DUAL 8V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 3130 E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 24dB
• Voltage - Rated: 8V
• Current Rating: 25mA
• Noise Figure: 1.3dB
• Current - Test: 14mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.025 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BG3130E6327XT; SP000013182

Gate 1 forward transconductance
g
amp. A = amp. B
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
= ƒ(I
mS
mA
= 5V, V
40
30
25
20
15
10
13
11
10
5
0
9
8
7
6
5
4
3
2
1
0
0
0
D
0.5
), V
4
G2S
DS
1
8
D
2V
= 5V, V
= 4V, R
1.5
= ƒ(V
12
2
16
2.5V
GG
2.5
G2S
G1
20
) amp.A=amp.B
= 120kΩ
3
= Parameter
24
3V
3.5
28 mA
3.5V
4
I
V
4V
D
V
GG
36
5
5
Drain current I
V
amp. A = amp. B
Drain current I
V
amp. A = amp. B
DS
G2S
mA
µA
= 5V, V
32
24
20
16
12
22
18
16
14
12
10
= 4V, R
8
4
0
8
6
4
2
0
0
0
0.2 0.4 0.6 0.8
1
G2S
G1
D
D
= Parameter
= Parameter in kΩ
2
= ƒ(V
= ƒ(V
3
GG
G1S
1
)
4
1.2 1.4 1.6
)
5
BG3130...
2005-11-03
2.5V
2V
4V
V
3V
1.5V
V
V
70
80
100
120
V
GG
G1S
=V DS
7
2