BG 5120K E6327 Infineon Technologies, BG 5120K E6327 Datasheet - Page 5

• Manufacturer Part Number: BG 5120K E6327
• Description: MOSFET N-CH DUAL 8V 20MA SOT-363
• Manufacturer: Infineon Technologies

Specifications of BG 5120K E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Rated: 8V
• Current Rating: 20mA
• Noise Figure: 1.1dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Dual
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: +/- 6 V
• Continuous Drain Current: 0.02 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000292148

Gate 1 forward transconductance
g
V
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
DS
= ƒ(I
mS
mA
= 5V, V
= 5V, V
40
30
25
20
15
10
12
10
5
0
9
8
7
6
5
4
3
2
1
0
0
0
4.0 V
3.0 V
2.0 V
1.5 V
D
0.5
)
2
G2S
G2S
4
1
D
= Parameter
= 4V, R
1.5
6
= ƒ(V
8
2
GG
2.5
10
G1
)
12
= 150kΩ
3
3.5
14
16 mA
4
I
V
D
V
GG
20
5
5
Drain current I
V
V
Drain current I
V
R
DS
G2S
DS
G1
mA
mA
= Parameter in kΩ
= 5V
= 5V, V
14
12
11
10
20
16
14
12
10
= Parameter
9
8
7
6
5
4
3
2
1
0
8
6
4
2
0
0
0
0.2 0.4 0.6 0.8
0.5
G2S
82 k
100 k
120 k
150 k
1
D
D
= 4V
1.5
= ƒ(V
= ƒ(V
2
G1S
GG
2.5
1
)
1.2 1.4 1.6
)
3
3.5
BG5120K
4.0V
2.0V
1.5V
1.0V
2009-10-01
4
V G
V
V
V
GG
1
=V
2
5
DS