BF 998R E6327 Infineon Technologies, BF 998R E6327 Datasheet
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Manufacturer Part Number
BF 998R E6327
Description
MOSFET N-CH RF 12V 30MA SOT-143
Manufacturer
Infineon Technologies
Specifications of BF 998R E6327
Package / Case
SOT-143R
Transistor Type
N-Channel
Frequency
45MHz
Gain
28dB
Voltage - Rated
12V
Current Rating
30mA
Noise Figure
2.8dB
Current - Test
10mA
Voltage - Test
8V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.03 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Channel Type
N
Drain Source Voltage (max)
12V
Power Gain (typ)@vds
28@8VdB
Noise Figure (max)
2.8(Typ)dB
Frequency (max)
1GHz
Package Type
SOT-143R
Pin Count
3 +Tab
Forward Transconductance (typ)
0.024S
Input Capacitance (typ)@vds
2.1@8V@Gate 1/1.2@8V@Gate 2pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
BF998RE6327XT SP000010979
Silicon N_Channel MOSFET Tetrode
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BF998
BF998R
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Total power dissipation
T
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1
2
Pb-containing package may be available upon special request
For calculation of R thJA please refer to Application Note Thermal Resistance
S
Short-channel transistor
For low-noise, gain-controlled
Pb-free (RoHS compliant) package
Qualified according AEC Q101
with high S / C quality factor
input stage up to 1 GHz
76 °C, BF998, BF998R
Package
SOT143
SOT143R
2)
, BF998, BF998R
1=S
1=D
1)
2=D
2=S
1
Pin Configuration
3=G2
3=G1
Symbol
V
I
P
T
T
Symbol
R
D
I
stg
ch
DS
tot
thchs
G1/2SM
4=G1
4=G2
-
-
-55 ... 150
Value
Value
200
150
12
30
10
370
-
-
2007-04-20
BF998...
Marking
MOs
MRs
Unit
V
mA
°C
Unit
K/W
Related parts for BF 998R E6327
BF 998R E6327 Summary of contents
Silicon N_Channel MOSFET Tetrode Short-channel transistor with high quality factor For low-noise, gain-controlled input stage GHz Pb-free (RoHS compliant) package Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package ...
Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S Gate 1 source breakdown voltage mA G2S G2S DS Gate2 source breakdown voltage ...
Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Forward transconductance mA G2S Gate1 input capacitance mA G2S ...
Total power dissipation P BF998, BF998R 220 mW 180 160 140 120 100 Gate 1 forward transconductance 5V Parameter ...
Drain current G1S Parameter G2S -0.75 -0.5 -0.25 0 Noise figure G2S MHz 10 dB ...
Power gain G2S f = 800 MHz - Output capacitance C dss 2.5 2 1 Gate ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 0.25 B ...
Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Package SOT143R 2.9 ±0 0.2 +0.1 0.8 -0.05 +0.1 0.4 -0.05 1.7 0.2 ...
... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...
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