BF 2030W H6824 Infineon Technologies, BF 2030W H6824 Datasheet - Page 2

• Manufacturer Part Number: BF 2030W H6824
• Description: MOSFET N-CH 8V 40MA SOT343
• Manufacturer: Infineon Technologies

Specifications of BF 2030W H6824

• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Rated: 8V
• Current Rating: 40mA
• Noise Figure: 1.5dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Details

Thermal Resistance
Parameter
Channel - soldering point
BF2030/ BF2030R
BF2030W
Electrical Characteristics at T
Parameter
DC Characteristics
Drain-source breakdown voltage
I
Gate1-source breakdown voltage
+I
Gate2-source breakdown voltage
+I
Gate1-source leakage current
V
Gate2-source leakage current
V
Drain current
V
Drain-source current
V
Gate1-source pinch-off voltage
V
Gate2-source pinch-off voltage
V
1
D
For calculation of R thJA please refer to Application Note Thermal Resistance
G1S
G2S
DS
DS
DS
DS
G1S
G2S
= 20 µA, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, I
= 5 V, V
= 5 V, V
= 10 mA, V
= 10 mA, V
D
G1S
G2S
G2S
G1S
G2S
G1S
= 20 µA
= 0 , V
= 4 V, R
= 4 V, I
= 0 , V
G2S
G1S
= 0 , V
= 0 , V
= 0 , V
= 0 , V
G2S
G2S
D
DS
DS
1)
G1
= 20 µA
= 0
= 0
= 4 V
DS
DS
= 100 k
= 0
A
= 0
= 0
= 25°C, unless otherwise specified
2
Symbol
V
+V
+V
+I
+I
I
I
V
V
DSS
DSX
(BR)DS
G1S(p)
G2S(p)
G1SS
G2SS
Symbol
R
(BR)G1SS
(BR)G2SS
thchs
min.
0.3
0.3
10
6
6
-
-
-
-
Values
Value
typ.
370
280
0.5
0.6
12
-
-
-
-
-
-
max.
15
15
50
50
50
BF2030...
2007-04-20
-
-
-
-
Unit
V
nA
µA
mA
V
Unit
K/W