MRF6VP121KHSR6 Freescale Semiconductor, MRF6VP121KHSR6 Datasheet - Page 3

• Manufacturer Part Number: MRF6VP121KHSR6
• Description: MOSFET RF N-CH 50V NI-1230S
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP121KHSR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.03GHz
• Gain: 20dB
• Voltage - Rated: 110V
• Current Rating: 100µA
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: NI-1230S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Pulsed RF Performance — 785 MHz (In Freescale 785 MHz Test Fixture, 50 ohm system) V
Pulsed RF Performance — 1030 MHz (In Freescale 1030 MHz Test Fixture, 50 ohm system) V
Peak (100 W Avg.), f = 1030 MHz, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec Off, Repeated Every 40 msec, 6.4% Overall Duty
Cycle
Pulsed RF Performance — 1090 MHz (In Freescale 1090 MHz Test Fixture, 50 ohm system) V
Peak (100 W Avg.), f = 1090 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Peak (100 W Avg.), f = 785 MHz, 128 μsec Pulse Width, 10% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
Burst Droop
Power Gain
Drain Efficiency
Input Return Loss
Characteristic
(T
A
= 25°C unless otherwise noted) (continued)
Symbol
BD
G
G
G
IRL
IRL
η
η
η
ps
ps
ps
D
D
D
rp
DD
Min
—
—
—
—
—
—
—
—
—
DD
DD
= 50 Vdc, I
MRF6VP121KHR6 MRF6VP121KHSR6
= 50 Vdc, I
= 50 Vdc, I
--16.6
--25.3
18.9
57.8
19.8
59.0
0.21
21.4
56.3
Typ
DQ
DQ
DQ
= 150 mA, P
= 150 mA, P
= 150 mA, P
Max
—
—
—
—
—
—
—
—
—
out
out
out
= 1000 W
= 1000 W
= 1000 W
Unit
dB
dB
dB
dB
dB
dB
%
%
%
3