MRF6VP121KHSR6 Freescale Semiconductor, MRF6VP121KHSR6 Datasheet - Page 2

• Manufacturer Part Number: MRF6VP121KHSR6
• Description: MOSFET RF N-CH 50V NI-1230S
• Manufacturer: Freescale Semiconductor

Specifications of MRF6VP121KHSR6

• Transistor Type: 2 N-Channel (Dual)
• Frequency: 1.03GHz
• Gain: 20dB
• Voltage - Rated: 110V
• Current Rating: 100µA
• Current - Test: 150mA
• Voltage - Test: 50V
• Power - Output: 1000W
• Package / Case: NI-1230S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

2
MRF6VP121KHR6 MRF6VP121KHSR6
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests
f = 1030 MHz, 128 μsec Pulse Width, 10% Duty Cycle
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
Thermal Resistance, Junction to Case
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
Case Temperature 67°C, 1000 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle,
Case Temperature 62°C, Mode--S Pulse Train, 80 Pulses of 32 μsec On, 18 μsec
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
calculators by product.
Select Documentation/Application Notes -- AN1955.
50 Vdc, I
Off, Repeated Every 40 msec, 6.4% Overall Duty Cycle, 50 Vdc, I
GS
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 Vdc, V
= 0 Vdc, I
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
DQ
(4)
= 150 mA
D
DS
D
D
D
(3)
= 165 mA)
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 1000 μAdc)
= 150 mAdc, Measured in Functional Test)
= 2.7 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
(3)
(4)
(3)
(3)
Characteristic
Test Methodology
Characteristic
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
= 150 mA
V
Symbol
V
V
V
(BR)DSS
I
I
I
C
DS(on)
C
DQ
GS(th)
GS(Q)
C
G
IRL
GSS
DSS
DSS
η
oss
rss
iss
ps
D
= 150 mA, P
Symbol
Z
Min
110
0.9
1.5
19
54
—
—
—
—
—
—
—
—
θJC
out
= 1000 W Peak (100 W Avg.),
0.15
1.27
86.7
Typ
539
--23
1.6
2.2
20
56
—
—
—
—
1B (Minimum)
IV (Minimum)
B (Minimum)
Value
Class
Freescale Semiconductor
0.02
0.07
(1,2)
Max
100
2.4
10
10
22
—
—
—
—
—
—
--9
3
RF Device Data
(continued)
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
%