MRF7S18170HR5 Freescale Semiconductor, MRF7S18170HR5 Datasheet - Page 11
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MRF7S18170HR5
Manufacturer Part Number
MRF7S18170HR5
Description
IC MOSFET RF N-CHAN NI-880
Manufacturer
Freescale Semiconductor
Datasheet
1.MRF7S18170HR3.pdf
(15 pages)
Specifications of MRF7S18170HR5
Transistor Type
LDMOS
Frequency
1.81GHz
Gain
17.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.4A
Voltage - Test
28V
Power - Output
50W
Package / Case
NI-880
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
RF Device Data
Freescale Semiconductor
Figure 18. Series Equivalent Source and Load Impedance
f = 1920 MHz
Input
Matching
Network
Z
Z
f = 1760 MHz
source
load
1760
1780
1800
1820
1840
1860
1880
1900
1920
MHz
f
Z
V
load
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
source
1.93 - j6.00
1.95 - j6.10
1.99 - j6.18
1.95 - j6.22
1.85 - j6.30
1.71 - j6.26
1.55 - j6.25
1.39 - j6.20
1.23 - j6.15
Z
DQ
source
Device
Under
Test
W
= 1400 mA, P
f = 1920 MHz
f = 1760 MHz
Z
o
= 10 Ω
Z
out
load
= 50 W Avg.
Z
1.13 - j2.65
1.05 - j2.45
0.97 - j2.29
0.90 - j2.12
0.85 - j2.00
0.81 - j1.84
0.75 - j1.70
0.70 - j1.54
0.67 - j1.38
source
Z
load
W
Output
Matching
Network
MRF7S18170HR3 MRF7S18170HSR3
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