MRF7S18170HR5 Freescale Semiconductor, MRF7S18170HR5 Datasheet

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MRF7S18170HR5

Manufacturer Part Number
MRF7S18170HR5
Description
IC MOSFET RF N-CHAN NI-880
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF7S18170HR5

Transistor Type
LDMOS
Frequency
1.81GHz
Gain
17.5dB
Voltage - Rated
65V
Current Rating
10µA
Current - Test
1.4A
Voltage - Test
28V
Power - Output
50W
Package / Case
NI-880
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
u s e d i n C l a s s A B a n d C l a s s C f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW
• P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate - Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Freescale Semiconductor
Technical Data
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for CDMA base station applications with frequencies from 1805 to
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1400 mA, P
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Output Power
Operation
Case Temperature 84°C, 170 W CW
Case Temperature 79°C, 50 W CW
out
Power Gain — 17.5 dB
Drain Efficiency — 31%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
@ 1 dB Compression Point w 170 Watts CW
out
= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
V
T
T
DSS
T
θJC
GS
DD
stg
C
J
Document Number: MRF7S18170H
MRF7S18170HR3 MRF7S18170HSR3
1805 - 1880 MHz, 50 W AVG., 28 V
MRF7S18170HSR3
MRF7S18170HR3
LATERAL N - CHANNEL
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
RF POWER MOSFETs
SINGLE W - CDMA
MRF7S18170HSR3
MRF7S18170HR3
- 65 to +150
Value
- 0.5, +65
- 6.0, +10
32, +0
Value
0.27
0.30
NI - 880S
150
225
NI - 880
(2,3)
Rev. 1, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
Vdc
°C
°C
°C
1

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MRF7S18170HR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S18170H ...

Page 2

... Vdc — 2.7 — Vdc 4 5.4 7.6 Vdc 0.1 0.15 0.3 Vdc — 0.87 — pF — 703 — Avg 1807.5 MHz and f = out 16 17 — 5.8 6.2 — 5.7 6.2 — — dBc — (continued) RF Device Data Freescale Semiconductor ...

Page 3

... W CW 1840 MHz out Part - to - Part Insertion Phase Variation @ 1840 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) RF Device Data Freescale Semiconductor (continued) = 25°C unless otherwise noted) C Symbol = 28 Vdc VBW = 50 W Avg ...

Page 4

... C5750X5R1H106MT 477KXM063M ATC100B0R5BT500XT ATC100B0R2BT500XT ATC100B4R7BT500XT ATC100B2R0BT500XT ATC100B0R3BT500XT CRCW120610R0FKEA CRCW12061002FKEA V SUPPLY + C11 C12 C13 RF OUTPUT Z11 Z12 Z13 Z14 Z15 C9 C15 2.55 r Manufacturer ATC ATC ATC ATC ATC TDK Illinois Capacitor ATC ATC ATC ATC ATC Vishay Vishay RF Device Data Freescale Semiconductor ...

Page 5

... C18 C19 Figure 2. MRF7S18170HR3 Test Circuit Component Layout — 880 RF Device Data Freescale Semiconductor C20 C13 C10 C17 C11 C12 C9 C8 C15 C14 C6 C7 C16 C5 MRF7S18170H Rev. 4 MRF7S18170HR3 MRF7S18170HSR3 5 ...

Page 6

... ATC100B0R5BT500XT ATC100B0R2BT500XT ATC100B4R7BT500XT ATC100B2R0BT500XT ATC100B0R3BT500XT ATC100B0R2BT500XT CRCW120610R0FKEA CRCW12061002FKEA V SUPPLY + C11 C12 C13 RF OUTPUT Z11 Z12 Z13 Z14 Z15 C9 C15 2.55 r Manufacturer ATC ATC ATC ATC ATC TDK Illinois Capacitor ATC ATC ATC ATC ATC ATC Vishay Vishay RF Device Data Freescale Semiconductor ...

Page 7

... C18 C19 Figure 4. MRF7S18170HSR3 Test Circuit Component Layout — 880S RF Device Data Freescale Semiconductor C20 C13 C10 C17 C11 C12 C9 C8 C15 C14 C6 C7 C16 C5 MRF7S18170H Rev. 4 MRF7S18170HR3 MRF7S18170HSR3 7 ...

Page 8

... Vdc 1835 MHz 1845 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power RF Device Data Freescale Semiconductor 400 ...

Page 9

... DPD Corrected, No Memory Correction −60 − OUTPUT POWER (dBm) out Figure 12. Digital Predistortion Correction versus ACPR and Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS −10 (f1 + f2)/2 = Center Frequency of 1840 MHz −20 −30 −40 −50 IM7−U −60 100 400 1 Ideal − ...

Page 10

... Figure 17. Single - Carrier W - CDMA Spectrum 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 31%. DD out D 3.84 MHz Channel BW −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 f, FREQUENCY (MHz) RF Device Data Freescale Semiconductor 250 9 ...

Page 11

... MHz Figure 18. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor = 10 Ω load f = 1760 MHz f = 1760 MHz Z source f = 1920 MHz Vdc 1400 mA Avg out source load MHz W W 1760 1.93 - j6.00 1.13 - j2.65 1780 1.95 - j6.10 1.05 - j2.45 1800 1 ...

Page 12

... Figure 20. Pulsed CW Output Power Ideal P6dB = 55 dBm (316.23 W) Actual Vdc 1400 Pulsed CW, 12 μsec(on), 10% Duty Cycle 1840 MHz INPUT POWER (dBm) in Test Impedances per Compression Level Z Z source load Ω Ω 1.23 - j7.91 1.03 - j2.65 versus Input Power RF Device Data Freescale Semiconductor 44 ...

Page 13

... (FLANGE bbb bbb ccc (FLANGE (FLANGE bbb bbb ccc (FLANGE) RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) M ccc (LID) M aaa SEATING T PLANE CASE 465B - 03 ISSUE 880 MRF7S18170HR3 M M (INSULATOR) ccc (LID) aaa SEATING PLANE CASE 465C - 02 ISSUE 880S MRF7S18170HSR3 NOTES: 1 ...

Page 14

... Updated Fig. 16, CCDF W - CDMA 3GPP, Test Model 1, 64 PDCH, 50% Clipping, Single - Carrier Test Signal, to show input signal only MRF7S18170HR3 MRF7S18170HSR3 14 PRODUCT DOCUMENTATION REVISION HISTORY Description the RF test condition voltage callout for Characteristics table GS(Q) 2 and listed RF Device Data Freescale Semiconductor ...

Page 15

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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