MRF7S19170HSR3 Freescale Semiconductor, MRF7S19170HSR3 Datasheet - Page 9

• Manufacturer Part Number: MRF7S19170HSR3
• Description: IC MOSFET RF N-CHAN NI-880S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S19170HSR3

• Transistor Type: N-Channel
• Frequency: 1.93GHz
• Gain: 17.2dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 50W
• Package / Case: NI-880S
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 50W
• Power Gain (typ)@vds: 17.2dB
• Frequency (min): 1.93GHz
• Frequency (max): 1.99GHz
• Package Type: NI-880S
• Pin Count: 3
• Output Capacitance (typ)@vds: 703@28VpF
• Reverse Capacitance (typ): 0.9@28VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 32%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 5
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Figure 16. Series Equivalent Source and Load Impedance
f = 2040 MHz
Input
Matching
Network
Z
Z
f = 1880 MHz
source
load
1880
1900
1920
1940
1960
1980
2000
2020
2040
MHz
f
V
DD
Z
= Test circuit impedance as measured from
= Test circuit impedance as measured
load
= 28 Vdc, I
gate to ground.
from drain to ground.
Z
source
1.338 - j7.859
1.515 - j7.609
1.743 - j7.432
2.007 - j7.352
2.249 - j7.393
2.410 - j7.553
2.244 - j7.995
1.966 - j8.101
2.411 - j7.788
Z
DQ
source
Device
Under
Test
W
= 1400 mA, P
Z
source
Z
out
load
Z
o
0.967 - j2.868
0.942 - j2.725
0.920 - j2.585
0.893 - j2.449
0.865 - j2.313
0.841 - j2.192
0.820 - j2.073
0.802 - j1.957
0.779 - j1.834
f = 1880 MHz
= 50 W Avg.
= 10 Ω
f = 2040 MHz
Z
load
W
Output
Matching
Network
MRF7S19170HR3 MRF7S19170HSR3
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