MRFE6S9200HR3 Freescale Semiconductor, MRFE6S9200HR3 Datasheet - Page 5

• Manufacturer Part Number: MRFE6S9200HR3
• Description: MOSFET RF N-CH 58W 28V NI-880
• Manufacturer: Freescale Semiconductor

Specifications of MRFE6S9200HR3

• Transistor Type: N-Channel
• Frequency: 880MHz
• Gain: 21dB
• Voltage - Rated: 66V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 58W
• Package / Case: NI-880
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
23
22
21
20
19
18
17
1
I
DQ
Figure 5. Two - Tone Power Gain versus
= 2100 mA
1050 mA
1400 mA
700 mA
1750 mA
P
out
, OUTPUT POWER (WATTS) PEP
10
Output Power
Figure 3. Single - Carrier W - CDMA Broadband Performance
Figure 4. Single - Carrier W - CDMA Broadband Performance
V
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
DD
23
22
21
20
19
18
17
16
15
22
21
20
19
18
17
16
15
14
800
800
= 28 Vdc
820
820
G
η
η
ps
100
D
D
IRL
840
840
TYPICAL CHARACTERISTICS
IRL
@ P
@ P
V
I
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
DQ
V
I
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
DD
DQ
860
860
DD
out
= 1400 mA, Single−Carrier W−CDMA
out
= 28 Vdc, P
= 1400 mA, Single−Carrier W−CDMA
= 28 Vdc, P
= 58 Watts Avg.
= 99 Watts Avg.
600
880
880
out
out
900
900
= 99 W (Avg.)
= 58 W (Avg.)
G
ps
920
920
−10
−20
−30
−40
−50
−60
0
1
Figure 6. Third Order Intermodulation Distortion
PARC
PARC
V
f1 = 875 MHz, f2 = 885 MHz
Two−Tone Measurements
940
940
1050 mA
DD
= 28 Vdc
960
960
P
38
34
30
26
−0.3
−0.6
−0.9
−1.2
−1.5
51
45
39
33
−2.2
−2.4
−2.6
−2.8
−3
out
MRFE6S9200HR3 MRFE6S9200HSR3
, OUTPUT POWER (WATTS) PEP
versus Output Power
1400 mA
10
1750 mA
0
−4
−9
−12
−16
−3
−6
−9
−12
−15
I
DQ
= 700 mA
100
2100 mA
600
5