MRFE6S9200HR3 Freescale Semiconductor, MRFE6S9200HR3 Datasheet

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MRFE6S9200HR3

Manufacturer Part Number
MRFE6S9200HR3
Description
MOSFET RF N-CH 58W 28V NI-880
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRFE6S9200HR3

Transistor Type
N-Channel
Frequency
880MHz
Gain
21dB
Voltage - Rated
66V
Current Rating
10µA
Current - Test
1.4A
Voltage - Test
28V
Power - Output
58W
Package / Case
NI-880
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-

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© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1400 mA, P
64 DPCH with 45.2% Clipping, Channel Bandwidth = 3.84 MHz, Input
Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
(3 dB Input Overdrive from Rated P
Ruggedness.
Case Temperature 80°C, 200 W CW
Case Temperature 79°C, 58 W CW
Power Gain — 21 dB
Drain Efficiency — 35%
Device Output Signal PAR — 6.36 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 58 Watts Avg., f = 880 MHz, 3GPP Test Model 1,
(1,2)
Characteristic
Rating
DD
out
), Designed for Enhanced
Operation
DD
= 28 Volts, I
out
= 300 W CW
DQ
=
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
CASE 465B - 03, STYLE 1
Document Number: MRFE6S9200H
C
CASE 465C - 02, STYLE 1
J
MRFE6S9200HR3 MRFE6S9200HSR3
MRFE6S9200HSR3
MRFE6S9200HR3
MRFE6S9200HSR3
MRFE6S9200HR3
880 MHz, 58 W AVG., 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880
NI - 880S
SINGLE W - CDMA
- 65 to +150
Value
- 0.5, +66
- 0.5, +12
Value
0.29
0.33
150
225
(2,3)
Rev. 1, 12/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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MRFE6S9200HR3 Summary of contents

Page 1

... SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRFE6S9200HR3 CASE 465C - 02, STYLE 880S MRFE6S9200HSR3 Symbol Value Unit V - 0.5, +66 Vdc DSS V - 0.5, +12 Vdc +150 °C stg T 150 ° 225 °C J (2,3) Symbol Value Unit R °C/W θJC 0.29 0.33 MRFE6S9200HR3 MRFE6S9200HSR3 1 ...

Page 2

... W CW 880 MHz out Part - to - Part Insertion Phase Variation @ 880 MHz, Six Sigma Window Gain Variation over Temperature ( - 30°C to +85°C) Output Power Variation over Temperature ( - 30°C to +85°C) 1. Part is internally matched on input. MRFE6S9200HR3 MRFE6S9200HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...

Page 3

... Microstrip Z7 0.140″ x 0.491″ Microstrip Z8 0.244″ x 0.736″ x 0.980″ Taper Figure 1. MRFE6S9200HR3(SR3) Test Circuit Schematic Table 5. MRFE6S9200HR3(SR3) Test Circuit Component Designations and Values Part B1, B2 Small Ferrite Beads, Surface Mount C1, C2, C3, C4, C5 Chip Capacitors C7 2 ...

Page 4

... C2 C26 B1 R3 C30 C1 C7 C20 C31 B2 C27 C3 Figure 2. MRFE6S9200HR3(SR3) Test Circuit Component Layout MRFE6S9200HR3 MRFE6S9200HSR3 4 900 MHz NI−880 Rev. 3 C11 R2 C14 C16 C9 C12 C13 C8 C15 C17 R1 C10 C4 C22 C28 C23 C32 C34 C6 C18 C21 C19 C33 C29 C24 C25 C5 RF Device Data ...

Page 5

... Vdc I = 700 mA DQ 1400 mA 2100 mA 1750 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRFE6S9200HR3 MRFE6S9200HSR3 600 5 ...

Page 6

... No Memory Correction DPD Corrected, with Memory Correction −60 − OUTPUT POWER (dBm) out Figure 10. Digital Predistortion Correction versus ACPR and Output Power MRFE6S9200HR3 MRFE6S9200HSR3 6 TYPICAL CHARACTERISTICS −10 −20 −30 −40 IM7−U −50 IM7−L −60 −70 1 100 600 Figure 8. Intermodulation Distortion Products − 59.7 W − ...

Page 7

... Figure 15. Single - Carrier W - CDMA Spectrum 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 35%. DD out D 3.84 MHz Channel BW −ACPR in 3.84 MHz −ACPR in 3.84 MHz Integrated BW Integrated BW −5.4 −3.6 −1.8 0 1.8 3.6 5.4 f, FREQUENCY (MHz) MRFE6S9200HR3 MRFE6S9200HSR3 250 7 ...

Page 8

... MHz f = 800 MHz Figure 16. Series Equivalent Source and Load Impedance MRFE6S9200HR3 MRFE6S9200HSR3 8 Z load Z source f = 960 MHz Vdc 1400 mA Avg out source MHz W 800 4.23 - j4.85 0.70 - j0.33 820 4.46 - j4.69 0.76 - j0.13 840 4.39 - j4.75 0.78 - j0.02 860 4.06 - j4.68 ...

Page 9

... M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRFE6S9200HR3 MRFE6S9200HSR3 9 ...

Page 10

... Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers • Deleted output signal data from Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRFE6S9200HR3 MRFE6S9200HSR3 10 PRODUCT DOCUMENTATION REVISION HISTORY Description ...

Page 11

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007-2008. All rights reserved. MRFE6S9200HR3 MRFE6S9200HSR3 11 ...

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