MRF8S9200NR3 Freescale Semiconductor, MRF8S9200NR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8S9200NR3
• Description: MOSFET RF N-CH 58W OM780-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9200NR3

• Transistor Type: N-Channel
• Frequency: 940MHz
• Gain: 19.9dB
• Voltage - Rated: 70V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 58W
• Package / Case: OM-780-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 70V
• Output Power (max): 58W
• Power Gain (typ)@vds: 19.9dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: OM-780 EP
• Pin Count: 3
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 37.1%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 160 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
@ 1 dB Compression Point, CW

30 dBc
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 58 W Avg.
DD
= 28 Vdc, I
Symbol
VBW
IMD
∆P1dB
P1dB
∆G
G
DQ
sym
F
res
= 1400 mA, 920--960 MHz Bandwidth
Min
—
—
—
—
—
—
0.012
0.001
Typ
200
0.7
15
45
Max
—
—
—
—
—
—
MRF8S9200NR3
dBm/°C
dB/°C
MHz
MHz
Unit
dB
W
3