MRF8S9200NR3 Freescale Semiconductor, MRF8S9200NR3 Datasheet - Page 2

• Manufacturer Part Number: MRF8S9200NR3
• Description: MOSFET RF N-CH 58W OM780-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9200NR3

• Transistor Type: N-Channel
• Frequency: 940MHz
• Gain: 19.9dB
• Voltage - Rated: 70V
• Current Rating: 10µA
• Current - Test: 1.4A
• Voltage - Test: 28V
• Power - Output: 58W
• Package / Case: OM-780-2
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 70V
• Output Power (max): 58W
• Power Gain (typ)@vds: 19.9dB
• Frequency (min): 920MHz
• Frequency (max): 960MHz
• Package Type: OM-780 EP
• Pin Count: 3
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 37.1%
• Mounting: Surface Mount
• Mode Of Operation: 1-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

2
MRF8S9200NR3
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Functional Tests
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Per JESD22--A113, IPC/JEDEC J--STD--020
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate--Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
= 70 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
(1)
DS
D
D
D
(In Freescale Test Fixture, 50 ohm system) V
GS
GS
= 400 μAdc)
= 1400 mAdc, Measured in Functional Test)
= 3.3 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
Test Methodology
Frequency
Characteristic
920 MHz
940 MHz
960 MHz
Test Methodology
(T
A
= 25°C unless otherwise noted)
DD
= 28 Vdc, I
(dB)
19.9
19.9
19.5
G
ps
Symbol
V
Rating
V
V
ACPR
DD
I
I
I
PAR
DS(on)
DQ
GS(th)
GS(Q)
G
IRL
DSS
DSS
GSS
η
3
ps
D
= 28 Vdc, I
= 1400 mA, P
37.7
37.1
36.8
(%)
η
D
Min
DQ
Package Peak Temperature
1.5
2.3
0.1
5.8
18
34
—
—
—
—
—
out
= 1400 mA, P
Output PAR
= 58 W Avg., f = 940 MHz,
(dB)
6.1
6.1
6.0
--36.6
19.9
37.1
260
Typ
--22
2.3
0.2
6.1
—
—
—
3
IV (Minimum)
A (Minimum)
2 (Minimum)
out
Class
Freescale Semiconductor
= 58 W Avg.,
ACPR
(dBc)
--36.2
--36.6
--36.0
Max
--35
3.8
0.3
10
21
—
—
--9
1
1
3
RF Device Data
(continued)
μAdc
μAdc
μAdc
(dB)
Unit
Unit
Vdc
Vdc
Vdc
dBc
IRL
--14
--22
--15
dB
dB
dB
°C
%