MRF7S18125AHSR3 Freescale Semiconductor, MRF7S18125AHSR3 Datasheet - Page 6

• Manufacturer Part Number: MRF7S18125AHSR3
• Description: MOSFET RF N-CH CW 125W NI780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S18125AHSR3

• Transistor Type: N-Channel
• Frequency: 1.88GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 125W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

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MRF7S18125AHR3 MRF7S18125AHSR3
18
17
16
15
14
13
10
825 mA
Figure 5. Power Gain versus Output Power
550 mA
V
f = 1840 MHz
I
DD
DQ
= 28 Vdc
= 1650 mA
P
out
, OUTPUT POWER (WATTS) CW
1100 mA
1375 mA
Figure 4. Power Gain, Input Return Loss, EVM and Drain
17.5
16.5
15.5
17.5
16.5
15.5
14.5
17
16
15
18
17
16
15
Efficiency versus Frequency @ P
Efficiency versus Frequency @ P
Figure 3. Power Gain, Input Return Loss and Drain
1810
1810
V
P
DD
out
100
= 125 W CW, I
= 28 Vdc
1820
1820
TYPICAL CHARACTERISTICS
1830
1830
DQ
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
IRL
EVM
= 1100 mA
G
η
ps
D
300
1840
1840
V
I
DQ
IRL
DD
= 1100 mA, EDGE Modulation
= 28 Vdc, P
1850
1850
G
η
out
out
ps
D
−10
−20
−30
−40
−50
−60
1860
1860
0
= 125 Watts CW
0.1
= 57 Watts Avg.
out
Figure 6. Intermodulation Distortion Products
IM5−U
IM5−L
= 57 W Avg.
V
I
(f1 + f2)/2 = Center Frequency of 1840 MHz
DQ
DD
1870
1870
= 1100 mA, Two−Tone Measurements
IM7−U
= 28 Vdc, P
IM7−L
IM3−L
IM3−U
1880
1880
versus Two - Tone Spacing
out
59
58
57
56
55
54
53
60
50
40
30
20
10
0
TWO−TONE SPACING (MHz)
1
= 125 W (PEP)
−7
−9
−11
−13
−15
−17
−19
−7
−9
−11
−15
−13
−17
−19
Freescale Semiconductor
10
RF Device Data
100