MRF7S18125AHSR3 Freescale Semiconductor, MRF7S18125AHSR3 Datasheet - Page 3

• Manufacturer Part Number: MRF7S18125AHSR3
• Description: MOSFET RF N-CH CW 125W NI780S
• Manufacturer: Freescale Semiconductor

Specifications of MRF7S18125AHSR3

• Transistor Type: N-Channel
• Frequency: 1.88GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 1.1A
• Voltage - Test: 28V
• Power - Output: 125W
• Package / Case: NI-780S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
Avg., 1805 - 1880 MHz EDGE Modulation
P
IMD Symmetry @ 125 W PEP, P
VBW Resonance Point
Gain Flatness in 75 MHz Bandwidth @ P
Average Deviation from Linear Phase in 75 MHz Bandwidth
Average Group Delay @ P
Part - to - Part Insertion Phase Variation @ P
Gain Variation over Temperature
Output Power Variation over Temperature
Power Gain
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
@ P
f = 1840 MHz, Six Sigma Window
( - 30°C to +85°C)
( - 30°C to +85°C)
@ 1 dB Compression Point
out
= 125 W CW
`
30 dBc
out
Characteristic
= 125 W CW, f = 1840 MHz
out
where IMD Third Order
(T
out
C
out
= 25°C unless otherwise noted) (continued)
= 125 W CW
= 125 W CW,
DD
= 28 Vdc, I
Symbol
VBW
IMD
ΔP1dB
Delay
P1dB
EVM
SR1
SR2
G
G
ΔΦ
ΔG
η
Φ
ps
D
DQ
sym
F
res
= 1100 mA, 1805 - 1880 MHz Bandwidth
Min
MRF7S18125AHR3 MRF7S18125AHSR3
DD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
= 28 Vdc, I
0.016
0.49
1.21
8.66
0.01
1.75
Typ
140
- 63
- 75
0.8
35
17
38
8
DQ
= 1100 mA, P
Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
out
= 57 W
dBm/°C
% rms
dB/°C
MHz
MHz
Unit
dBc
dBc
dB
dB
W
ns
%
°
°
3