MRF6S21050LR3 Freescale Semiconductor, MRF6S21050LR3 Datasheet - Page 6

• Manufacturer Part Number: MRF6S21050LR3
• Description: MOSFET RF N-CH 28V 11.5W NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21050LR3

• Transistor Type: N-Channel
• Frequency: 2.16GHz
• Gain: 16dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 11.5W
• Package / Case: NI-400
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF6S21050LR3 MRF6S21050LSR3
6
16.5
15.5
14.5
13.5
−60
−10
−20
−30
−40
−50
16
15
14
13
0.01
3
Figure 7. Intermodulation Distortion Products
V
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
Figure 10. Power Gain and Drain Efficiency
DD
5th Order
7th Order
3rd Order
= 28 Vdc, P
G
ps
η
D
0.1
P
versus CW Output Power
out
out
versus Tone Spacing
TWO−TONE SPACING (MHz)
, OUTPUT POWER (WATTS) CW
= 60 W (PEP), I
10
1
DQ
40
35
30
25
20
15
10
V
I
f = 2140 MHz
Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain
DQ
5
0
= 450 mA
DD
0.2
= 450 mA
= 28 Vdc
V
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz @ 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
G
DD
η
ps
and Drain Efficiency versus Output Power
D
= 28 Vdc, I
10
TYPICAL CHARACTERISTICS
P
out
, OUTPUT POWER (WATTS) AVG. W−CDMA
DQ
= 450 mA, f1 = 2135 MHz
1
100
100
64
56
48
40
32
24
16
8
16.5
15.5
14.5
13.5
12.5
17
16
15
14
13
12
52
51
50
49
48
47
46
45
44
28
0
Figure 11. Power Gain versus Output Power
Figure 8. Pulsed CW Output Power versus
P1dB = 47.89 dBm (61.52 W)
10
10
29
IM3
20
P
30
ACPR
out
30
, OUTPUT POWER (WATTS) CW
P
30
in
P3dB = 48.66 dBm (73.43 W)
, INPUT POWER (dBm)
31
−20
−25
−30
−35
−40
−45
−50
−55
−60
Input Power
40
V
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
DD
V
50
32
DD
= 28 Vdc, I
Freescale Semiconductor
= 24 V
60
33
DQ
70
28 V
= 450 mA
RF Device Data
34
I
f = 2140 MHz
DQ
80
= 450 mA
Actual
32 V
35
90
Ideal
100
36