MRF6S21050LR3 Freescale Semiconductor, MRF6S21050LR3 Datasheet - Page 2

• Manufacturer Part Number: MRF6S21050LR3
• Description: MOSFET RF N-CH 28V 11.5W NI-400
• Manufacturer: Freescale Semiconductor

Specifications of MRF6S21050LR3

• Transistor Type: N-Channel
• Frequency: 2.16GHz
• Gain: 16dB
• Voltage - Rated: 68V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 28V
• Power - Output: 11.5W
• Package / Case: NI-400
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -

MRF6S21050LR3 MRF6S21050LSR3
2
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate - Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain - Source On - Voltage
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
DS
DS
GS
DS
DD
GS
DS
= 68 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 5 Vdc, V
= 10 Vdc, I
DS
D
D
D
GS
GS
= 200 μAdc)
= 450 mAdc, Measured in Functional Test)
= 1.1 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(1)
Characteristic
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
Symbol
DQ
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
IRL
DSS
DSS
GSS
η
= 450 mA, P
rss
ps
D
Min
out
—
—
—
—
—
15
26
—
—
—
1
2
= 11.5 W Avg., f = 2157 MHz, 2 - carrier
0.21
0.75
27.7
Typ
- 37
- 40
- 15
2.9
16
—
—
—
1C (Minimum)
2
III (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
- 35
- 38
0.3
10
18
—
—
- 9
1
1
3
4
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%