MRF9060LR1 Freescale Semiconductor, MRF9060LR1 Datasheet - Page 3

• Manufacturer Part Number: MRF9060LR1
• Description: IC MOSFET RF N-CHAN NI-360
• Manufacturer: Freescale Semiconductor

Specifications of MRF9060LR1

• Transistor Type: N-Channel
• Frequency: 945MHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 10µA
• Current - Test: 450mA
• Voltage - Test: 26V
• Power - Output: 70W
• Package / Case: NI-360
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Power Gain (typ)@vds: 17dB
• Frequency (max): 1GHz
• Package Type: NI-360
• Pin Count: 3
• Forward Transconductance (typ): 5.3S
• Input Capacitance (typ)@vds: 98@26VpF
• Output Capacitance (typ)@vds: 50@26VpF
• Reverse Capacitance (typ): 2@26VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 51%
• Mounting: Screw
• Mode Of Operation: 2-Tone
• Number Of Elements: 1
• Power Dissipation (max): 159000mW
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Two - Tone Common - Source Amplifier Power Gain
Two - Tone Drain Efficiency
3rd Order Intermodulation Distortion
Input Return Loss
Power Output, 1 dB Compression Point
Common- Source Amplifier Power Gain
Drain Efficiency
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 945.0 MHz, f2 = 945.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
(V
f1 = 945.0 MHz)
(V
f1 = 945.0 MHz)
(V
f1 = 945.0 MHz)
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
= 26 Vdc, P
out
out
out
out
out
out
out
out
out
out
out
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W PEP, I
= 60 W CW, I
= 60 W CW, I
= 60 W CW, I
Characteristic
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
= 450 mA,
= 450 mA,
= 450 mA,
(T
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
= 450 mA,
C
= 25°C unless otherwise noted)
Symbol
P
IMD
IMD
G
G
G
IRL
IRL
1dB
η
η
η
ps
ps
ps
(continued)
Min
16
36
—
—
—
—
—
—
—
—
—
Typ
- 31
- 16
- 31
- 16
17
40
17
39
70
17
51
MRF9060LR1 MRF9060LSR1
Max
- 28
—
—
—
—
—
—
—
—
—
- 9
Unit
dBc
dBc
dB
dB
dB
dB
dB
%
%
W
%
3